2sa1190etz-e Renesas Electronics Corporation., 2sa1190etz-e Datasheet - Page 5

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2sa1190etz-e

Manufacturer Part Number
2sa1190etz-e
Description
Silicon Pnp Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SA1190
Rev.2.00 Aug 10, 2005 page 5 of 6
1,000
100
100
2.0
1.6
1.2
0.8
0.4
1.0
0.1
30
10
10
0
3
1
10
–1
10
Collector to Base Voltage V
Noise Voltage referred to Input vs.
Noise Voltage referred to Input vs.
Signal Source Resistance R
f = 1 MHz
I
Collector Output Capacitance vs.
E
V
f = 1 kHz
CE
= 0
Signal Source Resistance
Collector to Base Voltage
= –6 V
100
–3
100
Frequency f (Hz)
Frequency
I
C
–10
= –10 mA
1 k
1 k
I
–0.1
C
V
Rg = 0
= –1 mA
–30
10 k
10 k
CE
–10
= –6 V
CB
g
–1
( )
(V)
–100
100 k
100 k
1.0
0.3
0.1
1.0
0.9
0.8
0.7
0.6
0.5
10
3
–0.1
–1
Collector to Emitter Voltage V
Noise Voltage referred to Input vs.
Noise Voltage referred to Input vs.
Collector to Emitter Voltage
Collector Current I
–0.3
–3
Collector Current
–1.0
–10
I
Rg = 0
f = 1 kHz
C
C
= –1 mA
–30
–3
V
Rg = 0
f = 1 kHz
(mA)
CE
= –6 V
CE
–100
(V)
–10

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