2sa1924 TOSHIBA Semiconductor CORPORATION, 2sa1924 Datasheet - Page 3

• Manufacturer Part Number: 2sa1924
• Description: Toshiba Transistor Silicon Pnp Triple Diffused Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−500
−400
−300
−200
−100
1000
−0.5
−0.3
−0.1
500
100
−10
50
30
10
−5
−3
−1
0
5
3
−1
−1
0
−80
Common emitter
I C /I B = 10
Common emitter
V CE = −5 V
−2
−100
Collector-emitter voltage V
−4
Tc = 100°C
−55
Collector current I
Collector current I
Tc = −55°C
−6
−10
−10
100
25
V
−8
BE (sat)
I
h
C
−60
FE
– V
−10
25
– I
CE
C
– I
−40
−12 −14
C
C
C
−100
Common emitter
Ta = 25°C
I B = −0.5 mA
(mA)
(mA)
CE
−100
−20
−16 −18
(V)
−10
−2
−1
−5
−1000
−500
−20
3
−3000
−1000
−0.05
−0.03
−500
−400
−300
−200
−100
−300
−100
−0.5
−0.3
−0.1
−30
−10
−30
−10
−5
−3
−1
−3
−1
0
−1
−1
0
I C max (pulsed)*
I C max (continuous)
Common emitter
I C /I B = 10
*: Single nonrepetitive
Curves must be derated
linearly with increase in
temperature.
Common emitter
V CE = −5 V
pulse Tc = 25°C
−0.2
−3
Collector-emitter voltage V
Collector-emitter voltage V
DC operation
Tc = 25°C
Collector current I
−10
Safe Operating Area
−0.4
−10
100
Tc = 100°C
V
25
CE (sat)
I
C
10 ms*
– V
−0.6
−30
Tc = −55°C
1 ms*
−100
BE
25
– I
C
V CEO max
C
100 μs*
−100
−0.8
(mA)
BE
CE
−55
−300
(V)
(V)
−1000
−1
300 μs*
10 μs*
2006-11-09
2SA1924
−1000
−1.2