2sa1931 TOSHIBA Semiconductor CORPORATION, 2sa1931 Datasheet - Page 3

• Manufacturer Part Number: 2sa1931
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−0.5
−0.3
−0.1
−10
500
300
100
−8
−6
−4
−2
−5
−3
−1
50
30
10
−0.03
−0.03
0
0
Tc = 100°C
Common emitter
Tc = 25°C
Common emitter
V CE = −1 V
Common emitter
I C /I B = 20
Collector−emitter voltage V
Tc = 100°C
−0.1
−0.1
−2
Collector current I
Collector current I
−25
25
−25
25
V
−0.3
−0.3
−4
BE (sat)
I
h
C
FE
−0.5
– V
– I
CE
C
– I
−6
−1
−1
C
C
C
(A)
(A)
−100
CE
I B = −10 mA
−3
−3
−8
(V)
−90
−5
−40
−20
−50
−30
−80
−70
−60
−10
−10
−10
3
−0.05
−0.03
−0.01
−0.05
−0.03
−0.5
−0.3
−0.1
−0.5
−0.3
−0.1
−10
−10
−8
−6
−4
−2
−5
−3
−1
−0.01
−5
−3
−1
−0.1
0
0
*: Single non-repetitive pulse
I C max (Continuous)
I C max (Pulse)*
Common emitter
V CE = −1 V
Common emitter
I C /I B = 20
Tc = 25°C
Curves must be de-rated
linearly
temperature.
Collector−emitter voltage V
−0.03
−0.3
Base−emitter voltage V
−0.4
Collector current I
with
Tc = 100°C
25
Safe operating area
−0.1
−1
increase
V
Tc = 100°C
−0.8
CE (sat)
I
−25
C
−0.3
DC operation
Tc = 25°C
– V
−3
−25
in
25
BE
−1.2
– I
C
−10
C
−1
V CEO max
BE
(A)
CE
1 ms*
−1.6
10 ms*
(V)
−30
−3
100 ms*
(V)
2006-11-13
2SA1931
−100
−2.0
−10