2sa1934 TOSHIBA Semiconductor CORPORATION, 2sa1934 Datasheet - Page 4

• Manufacturer Part Number: 2sa1934
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−0.05
−0.05
−0.03
−0.03
−0.5
−0.3
−0.1
−0.5
−0.3
−0.1
−10
−10
−0.003
−5
−3
−1
−5
−3
−1
−0.1
I C max (pulsed)*
I C max (continuous)
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
Ta = 25°C
−0.01
DC operation
Ta = 25°C
Collector-emitter voltage V
Ta = −55°C
100
Collector current I
300
100
−0.03
0.3
30
10
Safe Operating Area
0.001
−1
3
1
V
No heat sink
Ta = 25°C
25
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
BE (sat)
−0.1
100 μs*
1 ms*
– I
−10
10 ms*
−0.3
0.01
C
C
V CEO max
Common emitter
I C /I B = 20
CE
(A)
−1
(V)
100 μs*
−100
0.1
−3
Pulse width t
r
th
– t
1
4
w
w
(s)
2.0
1.6
1.2
0.8
0.4
−5
−4
−3
−2
−1
0
0
0
0
10
Common emitter
V CE = −1 V
−0.2
25
Ambient temperature Ta (°C)
Base-emitter voltage V
−0.4
Ta = 100°C
50
100
−0.6
I
75
P
C
C
– V
– Ta
25
−0.8
BE
100
1000
BE
−1.0
−55
125
(V)
−1.2
150
2006-11-09
2SA1934
−1.4
175