2sa1774eb ROHM Co. Ltd., 2sa1774eb Datasheet - Page 2

• Manufacturer Part Number: 2sa1774eb
• Description: General Purpose Transistor
• Manufacturer: ROHM Co. Ltd.

Transistors
h
FE
Electrical characteristics (Ta=25°C)
Electrical characterristic curves
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Fig.1 Grounded emitter propagation
500
200
100
−0.5
−0.2
−0.1
50
−50
−20
−10
rank categories
Rank
−0.2 −0.5 −1 −2
−5
−2
−1
h
Fig.4 DC current gain vs.
−0.2
FE
Ta=25˚C
Ta=100˚C
characteristics
BASE TO EMITTER VOLTAGE : V
COLLECTOR CURRENT : I
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−40˚C
collector current (I)
25˚C
Parameter
82 to 180
P
V
−5 −10 −20
CE
= −5V
−3V
−1V
120 to 270
C
(
mA)
Q
V
CE
−50 −100
= −6V
BE
(
V)
Symbol
V
BV
BV
BV
180 to 390
Cob
I
I
CE(sat)
CBO
EBO
h
f
T
CEO
CBO
EBO
FE
500
200
100
R
50
−10
−0.2 −0.5 −1 −2
−8
−6
−4
−2
Fig.2 Grounded emitter output
0
COLLECTOR TO MITTER VOLTAGE : V
Ta=25˚C
Fig.5 DC current gain vs.
Min.
−50
−60
−6
82
COLLECTOR CURRENT : I
−
−
−
−
−
characteristics (I)
−0.4
270 to 560
collector current (II)
Ta=100˚C
S
Typ.
140
4.0
−0.8
−
−
−
−
−
−
−
−40˚C
25˚C
−5 −10 −20
Max.
−100
−100
−1.2
−0.5
560
5.0
−
−
−
−
C
−1.6
V
(
mA)
CE
−31.5
−28.0
−24.5
−17.5
−14.0
−10.5
−21.0
MHz
−35.0
−3.5µA
−7.0
Unit
= −6V
−50 −100
nA
nA
pF
V
V
V
V
I
−
B
=0
CE
−2.0
(
V)
V
I
I
I
V
I
V
V
V
C
C
E
C
EB
=−50µA
CB
CE
CE
CE
=−1mA
=−50µA
/I
B
−0.05
=−6V
=−60V
=−6V, I
=−12V, I
=−12V, I
=−50mA/−5mA
−0.5
−0.2
−0.1
−100
Fig.6 Collector-emitter saturation
−80
−60
−40
−20
−1
−0.2 −0.5 −1
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter output
0
Ta=25˚C
−500
−450
−400
−350
−300
C
Conditions
COLLECTOR CURRENT : I
=−1mA
voltage vs. collector current (I)
E
E
characteristics (II)
=2mA, f=100MHz
=0A, f=1MHz
−1
I
C
/I
−2
B
= 50
−2
2SA1774EB
20
10
−5 −10 −20
−3
C
Ta=25˚C
(
−4
mA)
−50µA
−250
−200
−150
−100
−50 −100
I
B
CE
=0
2/3
(
V)
−5