bcx5316tc Zetex Semiconductors plc., bcx5316tc Datasheet
bcx5316tc
Manufacturer Part Number
bcx5316tc
Description
Pnp Silicon Planar Medium Power Transistor
Manufacturer
Zetex Semiconductors plc.
Datasheet
1.BCX5316TC.pdf
(1 pages)
SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
COMPLEMENTARY TYPE –
PARTMARKING DETAILS –
BCX51
BCX51-10 – AC
BCX51-16 – AD
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter BCX53
Breakdown
Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
– AA
BCX53
BCX52
BCX51
BCX51
BCX52
BCX52
BCX52-10 – AG
BCX52-16 – AM
amb
=25°C
SYMBOL MIN.
V
V
V
I
I
V
V
h
-10
-16
f
C
CBO
EBO
T
BCX51 – BCX54
BCX52 – BCX55
BCX53 – BCX56
– AE
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(on)
obo
-100
-60
-45
-80
-60
-45
-5
25
40
25
63
100
150
BCX53
BCX53-10 – AK
BCX53-16 – AL
3 - 34
amb
TYP.
I
SYMBOL
V
V
V
I
P
T
CM
C
CBO
CEO
EBO
tot
j
:T
= 25°C unless otherwise stated).
– AH
stg
MAX. UNIT CONDITIONS.
-0.1
-20
-20
-0.5
-1.0
250
160
250
25
BCX51
V
V
V
V
V
nA
V
V
MHz
pF
-45
-45
A
A
-65 to +150
I
I
I
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
f=100MHz
V
C
C
C
C
C
C
E
C
C
C
C
C
C
C
C
CB
CB
EB
CB
BCX52
=-100 A
=-100 A
=-10mA*
=-10mA*
=-10 A
=-500mA, I
=-500mA, V
=-5mA, V
=-150mA, V
=-500mA, V
=-150mA, V
=-150mA, V
=-50mA, V
=-100 A
=-10mA*
-1.5
-60
-60
-5
-1
=-30V
=-30V, T
=-4V
=-10V, f=1MHz
1
C
BCX51
BCX52
BCX53
BCX53
CE
SOT89
-100
amb
-80
CE
B
B
CE
CE
CE
CE
CE
=-2V*
=-50mA*
=-10V,
=150°C
=-2V*
=-2V*
=-2V*
=-2V*
=-2V*
C
UNIT
E
°C
W
A
A
V
V
V