lp3443lt1g Leshan Radio Company, lp3443lt1g Datasheet - Page 2

• Manufacturer Part Number: lp3443lt1g
• Description: 20v P-channel Enhancement-mode Mosfet Lp3443lt1g
• Manufacturer: Leshan Radio Company

Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
ELECTRICAL CHARACTERISTICS
Note
:
3)
Pulse test: pulse width <= 300us, duty cycle<= 2%
Symbol
R
R
R
BV
V
t
t
I
I
V
Q
Q
DS(on)
DS(on)
DS(on)
GS(th)
d(on)
d(off)
DSS
GSS
Q
g
I
t
t
SD
S
DSS
fs
gd
gs
r
f
g
V
V
V
V
V
V
V
V
V
V
V
I
I
D
R
S
GS
GS
GS
GS
DS
DS
GS
DS
DS
GS
DD
G
= -1.7A, V
= -1A, V
= 6Ω
= 0V, I
= -4.5V, I = -4.7A
= -2.7V, I = -3.8A
= -2.5V, I = -1.0A
=V
= -20V, V
= ± 12V, V
= -10V, I = -4.7A
= -10V, I
= -4.5V
= -10V, R
GS
Test Condition
, I
D
D
GS
GS
= -250uA
= -250uA
D
D
D
D
D
GS
D
= -4.5V
= -4.7A
DS
=10Ω
= 0V
= 0V
= 0V
LESHAN RADIO COMPANY, LTD.
Min
-0.6
-20
LP3443LT1G
-0.85
Typ
48.0
63.0
65.0
2.7
24
18
22
35
45
25
8
100.0
±100
Max
60.0
90.0
-1.4
-1.7
-1.2
36
35
55
70
40
-1
2/3
Unit
mΩ
uA
nA
nC
ns
V
V
S
A
V