s-80857cny-n-g Seiko Instruments Inc., s-80857cny-n-g Datasheet - Page 19

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s-80857cny-n-g

Manufacturer Part Number
s-80857cny-n-g
Description
Super-small Package High-precision Voltage Detector
Manufacturer
Seiko Instruments Inc.
Datasheet
*1. −V
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Detection voltage
Release voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Response time
Detection voltage
temperature
coefficient
Rev.5.0
2. CMOS Output Products
detection voltage range in Table 3 to 4 .)
2-1. Detection Voltage Typ.1.4 V or Less Products
DET
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Item
: Actual detection voltage value, −V
Δ
_00
*2
Δ
Ta
V
DET
*1
[
mV/
°
C
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Δ
]
Ta
*1
Δ
Symbol
−V
+V
V
=
I
V
t
I
OUT
PLH
HYS
SS
V
DD
DET
DET
DET
V
V
DET(S)
DET
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
V
V
Output transistor,
Nch, V
Output transistor,
Pch, V
(
Typ.
DD
DD
= 1.5 V
= 2.0 V
Ta = −40 to +85 °C
) [ ]
DS
V
DS
Seiko Instruments Inc.
DET(S)
2 *
= 2.1 V, V
= 0.5 V, V
Condition
×
: Specified detection voltage value (The center value of the
Δ
Table 16
Ta
Δ
S-80808 to 09
S-80810 to 14
V
DD
DD
DET
V
DET
= 4.5 V
= 0.7 V
[
ppm/
°
−V
C
×0.98
0.802
0.910
1.017
1.125
1.232
1.340
1.448
0.018
0.028
0.037
0.047
0.056
0.066
0.076
0.65
0.04
Min.
2.9
]
DET(S)
3 *
(Ta = 25 °C unless otherwise specified)
÷
1000
−V
0.834
0.944
1.054
1.164
1.273
1.383
1.493
0.034
0.044
0.054
0.064
0.073
0.083
0.093
±100
Typ.
1.3
1.3
0.2
5.8
DET(S)
−V
×1.02
0.867
0.979
1.091
1.203
1.315
1.427
1.538
0.051
0.061
0.071
0.081
0.091
0.101
0.110
Max.
±350
3.5
3.5
5.0
S-808xxC Series
60
DET(S)
ppm/
Unit
mA
mA
μA
μA
μs
°C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
circuit
Test
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
1
3
4
1
1
19

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