km4132g271b Samsung Semiconductor, Inc., km4132g271b Datasheet - Page 23
km4132g271b
Manufacturer Part Number
km4132g271b
Description
128k X 32bit X 2 Banks Synchronous Graphic Ram Lvttl
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.KM4132G271B.pdf
(51 pages)
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KM4132G271B
8. Burst Stop & Precharge Interrupt
9. MRS & SMRS
*Note :
1) Write Interrupted by Precharge (BL=4)
3) Read Interrupted by Precharge (BL=4)
1. t
2. t
3. Number of valid output data after Row precharge or burst stop : 1, 2 for CAS latency= 2, 3 respectiviely.
4. PRE : Both banks precharge if necessary.
1) Mode Register Set
DQ(CL3)
DQ(CL2)
MRS can be issued only at all bank precharge state.
RDL
BDL
DQM
CMD
CMD
CLK
CLK
DQ
CMD
: 1 CLK, Last Data in to Row Precharge.
: 1 CLK, Last Data in to Burst Stop Delay.
CLK
WR
RD
D
PRE
0
D
Note 4
1
t
PRE
RP
D
Q
2
0
t
RDL
PRE
D
Q
Q
Note 1
3
MRS ACT
1
0
1CLK
1
Note 3
Q
1
2
- 23
2) Special Mode Register Set
2) Write Burst Stop (Full Page Only)
4) Read Burst Stop (Full Page Only)
DQ(CL3)
DQ(CL2)
CMD
CLK
CMD
CMD
CLK
CLK
DQ
SMRS
WR
RD
1CLK
D
0
ACT SMRS SMRS
1CLK
D
1
STOP
1CLK
D
Q
2
0
t
Rev. 2.4 (May 1998)
CMOS SGRAM
BDL
STOP
1CLK
Q
Q
1
0
BW
1
Note 3
Q
1
2