km416rd8ac Samsung Semiconductor, Inc., km416rd8ac Datasheet - Page 49

• Manufacturer Part Number: km416rd8ac
• Description: 128/144mbit Rdram 256k X 16/18 Bit X 2*16 Dependent Banks Direct Rdramtm
• Manufacturer: Samsung Semiconductor, Inc.

KM416RD8AC(D)/KM418RD8AC(D)
Electrical Characteristics
a. This measurement is made in manual current control mode; i.e. with all output device legs sinking current.
Timing Characteristics
a. This parameter also applies to a -800 or -711 part when operated with t
b. This parameter also applies to a -800 part when operated with t
c. t
Symbol
I
I
I
r
I
V
V
Symbol
tQ
t
t
t
t
t
t
t
t
t
t
t
t
t
REF
OH
ALL
OUT
I,CMOS
QR
Q1
HR
QR1
PROP1
NAPXA
NAPXB
PDNXA
PDNXB
AS
SA
ASN
ASP
Q,MIN
I
JC
OL,CMOS
OH,CMOS
OL
, t
, t
QF
QF1
and t
Q,MAX
Parameter
CTM-to-DQA/DQB output time
DQA/DQB output rise and fall times
SCK(neg)-to-SIO0 delay @ C
SCK(pos)-to-SIO0 delay @ C
SIO
SIO0-to-SIO1 or SIO1-to-SIO0 delay @ C
NAP exit delay - phase A
NAP exit delay - phase B
PDN exit delay - phase A
PDN exit delay - phase B
ATTN-to-STBY power state delay
STBY-to-ATTN power state delay
ATTN/STBY-to-NAP power state delay
ATTN/STBY-to-PDN power state delay
for other t
Parameter and Conditions
Junction-to-Case thermal resistance
V
RSL output high current @ (0 V
RSL I
RSL I
Dynamic output impedance
CMOS input leakage current @ (0 V
CMOS output voltage @ I
CMOS output high voltage @ I
OUT
REF
rise/fall @ C
OL
OL
current @ V
CYCLE
current @ V
current resolution step
values can be interpolated between or extrapolated from the timings at the 3 specified t
LOAD,MAX
REF,MAX
OL
= 0.9V, V
OL,CMOS
LOAD,MAX
LOAD,MAX
= 20pF
Table 20: Electrical Characteristics
Table 21: Timing Characteristics
OH,CMOS
OUT
DD,MIN
= 1.0mA
@ tCYCLE=3.33ns
@ tCYCLE=2.81ns
I,CMOS
= 20pF (SD read data hold).
= 20pF (SD read data valid).
V
LOAD,MAX
@ tCYCLE=2.50ns
DD
= -0.25mA
CYCLE
, T
)
J,MAX
V
=2.81ns.
CMOS
CYCLE
Page 46
= 20pF
a
)
=3.33ns.
-0.350
-0.300
-0.260
Min
0.2
2
-
-
-
-
-
-
-
-
-
-
-
V
CMOS
a,c
b,c
c
-10.0
Min
30.0
150
-10
-10
-
-
-
-0.3
+0.350
+0.300
+0.260
9000
Max
0.45
10
10
50
40
5
4
1
0
8
8
-
Rev. 1.01 Oct. 1999
Direct RDRAM
b,c
a,c
c
CYCLE
Max
90.0
10.0
t
t
t
t
t
0.2
2.0
0.3
10
10
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
values.
s
Figure(s)
Figure 55
Figure 55
Figure 58
Figure 58
Figure 58
Figure 58
Figure 48
Figure 48
Figure 48
Figure 48
Figure 46
Figure 46
Figure 47
Figure 47
C/Watt
Unit
mA
mA
V
V
A
A
A
™