km416c254d Samsung Semiconductor, Inc., km416c254d Datasheet - Page 8

• Manufacturer Part Number: km416c254d
• Description: 256k X 16bit Cmos Dynamic Ram With Extended Data Out
• Manufacturer: Samsung Semiconductor, Inc.

KM416C254D, KM416V254D
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
t
t
t
t
t
t
t
DS
f
For RAS-only refresh and burst CAS-before-RAS refresh mode, 512(512K) cycle of burst refresh must be executed within 8ms
before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval, CAS-before-RAS refresh should be executed with in 15.6us immediately
before and after self refresh in order to meet refresh specification.
ASC
CP
CWD
CWL
CSR
CHR
DQ0 ~ DQ15
t
RASS
, t
is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle.
DH
,
is referenced to earlier CAS falling low before RAS transition low.
is referenced to the later CAS rising high after RAS transition low.
is specified from W falling edge to the earlier CAS rising edge.
t
is referenced to the later CAS falling edge at word red-modify-write cycle.
CAH
are specified for the earlier CAS falling low.
100us, then RAS precharge time must use
UCAS
LCAS
UCAS
LCAS
are referenced to the earlier CAS rising edge.
RAS
W
t
DS
Din
t
CSR
t
DH
t
RPS
instead of
t
CHR
t
RP
.
CMOS DRAM