pa2423g SiGe Semiconductor, pa2423g Datasheet

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pa2423g

Manufacturer Part Number
pa2423g
Description
2.4 Ghz Bluetooth Class 1 Power Amplifier Ic Preliminary Information
Manufacturer
SiGe Semiconductor
Datasheet
DOC # 05PDS003 S Rev 5 S
Applications
Y
Y
Y
Y
Y
Y
Features
Y
Y
Y
Y
Y
Y
Ordering Information
PA2423G
PA2423G-EV
Functional Block Diagram
Bluetooth
USB Dongles
Laptops
Access Points
Cordless Piconets
Flip chip and chip-on-board applications
+22.5 dBm at 47% Power Added Efficiency
Low current 80 mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
-40C to +85C temperature range
Gold bump bare die (0.63mm x 0.96mm)
Part
tm
Class 1
Gold bump bare
die
IN
Evaluation kit
Package
Stage 1
GND
Diced wafer
Waffle pack
Shipping
Method
Bias Generator
07/26/2001
Interstage
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Match
V
V
CTL
CC1
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423G is designed for
Class 1 Bluetooth
delivers +22.5 dBm output power with 47% power-
added
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
Class 1 Bluetooth
The amplifier features:
Y
Y
An on-chip ramping circuit corrects the turn-on/off
switching of amplifier output with less than 3 dB
overshoot, meeting the Bluetooth
The PA2423G operates at 3.3V DC.
output power level (+22.5 dBm), its current
consumption is 120 mA.
The silicon/silicon-germanium structure of the
PA2423G provides high thermal conductivity and
a subsequently low junction temperature. This
device is capable of operating at a duty cycle of
100 percent.
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
efficiency
Circuitry
V
Ramp
CC0
Stage 2
GND
tm
tm
V
Preliminary Information
applications.
RAMP
2.4 GHz radio applications. It
OUT/ V
making
CC2
tm
specification 1.1.
it
PA2423G
capable
At typical
Page 1
of

Related parts for pa2423g

pa2423g Summary of contents

Page 1

... Stage 1 GND DOC # 05PDS003 S Rev 5 S 2.4 GHz Bluetooth Class 1 Power Amplifier IC Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423G is designed for Class 1 Bluetooth delivers +22.5 dBm output power with 47% power- added efficiency overcoming insertion losses 2.5 dB between amplifier output and antenna input in ...

Page 2

... X = 672µm ± 10µ 115µm ± 10µ 512µm ± 10µ 115µm ± 10µ 352µm ± 10µ 115µm ± 10µ 192µm ± 10µ 115µm ± 10µm Parameter Min. -0.3 -0.3 -0.3 -4 -4 07/26/2001 PA2423G Preliminary Information (lower left corner is (0.0)) Max. Unit +3 ...

Page 3

... VCC2 <+8qC) A Pin CTL = 0V RAMP =3.3V,P =+2 dBm, T =25qC 2.45GHz, CTL IN A Parameter =+2 dBm,V = 3.3V IN CTL =+2 dBm,V =0.4V IN CTL <+8qC), V =3.3V A CTL =+2dBm,V =0V IN RAMP =2qC. A 07/26/2001 PA2423G Preliminary Information Min. Typ. Max. Unit 3.0 3.3 3.6 V 120 150 200 250 PA 2.0 V 0 Min Typ. Max. Unit . 240 ...

Page 4

... GHz Bluetooth Class 1 Power Amplifier IC 960 P m ± 60± 60± 60± 100 ± 460± 100 ± 100± 60± 60± 60± SILICON 07/26/2001 PA2423G Preliminary Information 7 65Pmr10Pm 8 Gold Page 4 ...

Page 5

... P m ± 100± 100± 60± 60± 60± 60± 60± 60± 60± 60± 07/26/2001 PA2423G Preliminary Information 65Pmr10Pm 65Pmr10Pm 6 6 Page 5 ...

Page 6

... Typical Performance Characteristics SiGe PA2423G-EV evaluation board, V 2.45GHz, Input and Output externally matched to 50:unless otherwise noted) Pout, Icc vs Supply Voltage 2.4 2.6 2.8 3 3.2 3.4 Vcc(V) Pout Icc Supply Current vs Control Voltage 140 120 100 0.4 0.9 1.4 1.9 2.4 Vctl(V) Pin=-4dBm ...

Page 7

... Frequency (GHz) DOC # 05PDS003 S Rev 5 S 2.4 GHz Bluetooth Class 1 Power Amplifier IC 30.00 24.0 25.00 23.0 20.00 22.0 21.0 15.00 20.0 10.00 19.0 5.00 18.0 8 2.2 Harmonic Output Spectrum -10 -20 -30 -40 -50 2.6 2 2.4515 2.4525 07/26/2001 PA2423G Preliminary Information Pout vs Frequency 2.3 2.4 2.5 2.6 2.7 Frequency (GHz Frequency (GHz) Page 7 ...

Page 8

... RAMP tm 1.1. During receive mode, V Bluetooth between the radio and the antenna while consuming a modest 1uA. In transmit mode VCC and PA2423G offers 21dB of large signal gain. The rise and fall time are in the order of 1- 2usec. Using V CTL analog pin that is designed to control the gain of PA2423G. Applying a voltage between 0V and CTL Vcc will adjust the gain between -15dB and 21 dB ...

Page 9

... Headquarters: Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933 2680 Queensview Drive Ottawa ON K2B 8J9 Canada sales@sige.com United Kingdom 1010 Cambourne Business Park Cambourne Cambridge CB3 6DP Phone: +44 1223 598 444 Fax: 07/26/2001 PA2423G Preliminary Information +44 1223 598 035 Page 9 ...

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