mc9s08en32 Freescale Semiconductor, Inc, mc9s08en32 Datasheet - Page 286

• Manufacturer Part Number: mc9s08en32
• Description: Hcs08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

Appendix A Electrical Characteristics
A.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
286
Num
Human Body
Latch-up
1
2
3
ESD Protection and Latch-Up Immunity
Model
Human Body Model (HBM)
Charge Device Model (CDM)
Latch-up Current at T
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Table A-5. ESD and Latch-Up Protection Characteristics
Table A-4. ESD and Latch-up Test Conditions
A
= 125°C
Rating
MC9S08EN32 Series Data Sheet, Rev. 3
Description
Symbol
V
V
I
HBM
CDM
LAT
Symbol
+/- 2000
+/- 500
+/- 100
R1
C
–
Min
Value
1500
–2.5
100
7.5
Max
3
Freescale Semiconductor
–
–
–
Unit
pF
Ω
Unit
mA
V
V
V
V