mc9s08qb8 Freescale Semiconductor, Inc, mc9s08qb8 Datasheet - Page 9

• Manufacturer Part Number: mc9s08qb8
• Description: 8-bit Hcs08 Central Processor Unit
• Manufacturer: Freescale Semiconductor, Inc

T
θ
P
P
P
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
P
solving
3.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be taken to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification, ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless instructed otherwise in the device
specification.
Freescale Semiconductor
JA
A
D
int
I/O
D
= Ambient temperature, °C
= P
(at equilibrium) for a known T
= Package thermal resistance, junction-to-ambient, °C/W
= I
I/O
= Power dissipation on input and output pins — user determined
int
DD
is neglected) is:
Equation 1
Equation 1
+ P
ESD Protection and Latch-Up Immunity
× V
I/O
Latch-up
Machine
Model
Human
DD
Body
, Watts — chip internal power
and
and
Series resistance
Storage capacitance
Number of pulses per pin
Series resistance
Storage capacitance
Number of pulses per pin
Minimum input voltage limit
Maximum input voltage limit
Equation 2
I/O
Equation 2
<< P
Table 5. ESD and Latch-up Test Conditions
Description
int
K = P
MC9S08QB8 Series MCU Data Sheet, Rev. 2
A
and can be neglected. An approximate relationship between P
iteratively for any value of T
. Using this value of K, the values of P
for K gives:
D
P
× (T
D
= K ÷ (T
A
+ 273°C) + θ
J
+ 273°C)
Symbol
R1
R1
JA
—
—
C
C
× (P
D
A
)
.
2
Value
1500
–2.5
100
200
7.5
D
3
0
3
and T
J
Electrical Characteristics
can be obtained by
Unit
pF
pF
Ω
Ω
V
V
D
and T
Eqn. 2
Eqn. 3
J
9