mc9s08qe4 Freescale Semiconductor, Inc, mc9s08qe4 Datasheet - Page 27

• Manufacturer Part Number: mc9s08qe4
• Description: 8-bit Hcs08 Central Processor Unit
• Manufacturer: Freescale Semiconductor, Inc

3.13
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section.
Freescale Semiconductor
1
2
3
4
1
2
Typical values assume V
reference only and are not tested in production.
1 LSB = (V
Monotonicity and No-Missing-Codes guaranteed in 10-bit and 8-bit modes
Based on input pad leakage current. Refer to pad electricals.
C
D
D
D
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The frequency of this clock is controlled by a software setting.
C
D
D
D
D
P
P
P
P
C
C
Characteristic
Input Leakage
Error
Temp Sensor
Slope
Temp Sensor
Voltage
Flash Specifications
Supply voltage for program/erase
–40qC to 85qC
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
T
T = 25qC
REFH
Table 16. 12-bit ADC Characteristics (V
L
to T
– V
H
= –40qC to + 85qC
REFL
Characteristic
5
12 bit mode
10 bit mode
8 bit mode
–40qC to 25qC
25qC to 85qC
25qC
)/2
2
DDAD
2
N
3
Conditions
3
= 3.0 V, Temp = 25 qC, f
1
4
2
Table 17. Flash Characteristics
Subject to Change Without Notice
2
MC9S08QE8 Series, Rev. 3
V
Symbol
TEMP25
E
m
IL
Preliminary
V
ADCK
Symbol
RI
RI
prog/erase
V
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
Fcyc
Read
prog
REFH
DDBP
DDPE
—
=1.0 MHz unless otherwise stated. Typical values are for
Min.
—
—
—
—
—
—
= V
DDAD
10,000
Typical
Min
150
1.8
1.8
—
—
15
1.646
1.769
701.2
5
r0.2
r0.1
r2
, V
REFL
1
100,000
Typical
= V
20,000
Max.
r1.2
4000
100
—
r4
—
—
—
—
—
—
—
—
9
4
4
6
SSAD
) (continued)
DD
mV/qC
LSB
Unit
mV
supply. For more detailed
Electrical Characteristics
2
Max
6.67
200
3.6
3.6
—
—
—
—
—
Pad leakage
Comment
*R
cycles
years
AS
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
Ps
V
V
4
27