mc9s08sv8 Freescale Semiconductor, Inc, mc9s08sv8 Datasheet - Page 11

• Manufacturer Part Number: mc9s08sv8
• Description: 8-bit Hcs08 Central Processor Unit
• Manufacturer: Freescale Semiconductor, Inc

where:
T
θ
P
P
P
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from
P
solving
5.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be taken to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
During the device qualification, ESD stresses were performed for the human body model (HBM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless instructed otherwise in the device
specification.
Freescale Semiconductor
JA
A
D
int
I/O
D
= Ambient temperature, °C
= P
(at equilibrium) for an known T
= Package thermal resistance, junction-to-ambient, °C/W
= I
I/O
= Power dissipation on input and output pins — user determined
int
DD
is neglected) is:
Equation 1
Equation 1
+ P
ESD Protection and Latch-Up Immunity
× V
I/O
Latch-up
Human
Model
DD
body
, Watts — chip internal power
and
and
Series resistance
Storage capacitance
Number of pulses per pin
Minimum input voltage limit
Maximum input voltage limit
Equation 2
I/O
Equation 2
<< P
Table 5. ESD and Latch-Up Test Conditions
int
K = P
Description
and can be neglected. An approximate relationship between P
A
iteratively for any value of T
MC9S08SV16 Series Data Sheet, Rev. 2
for K gives:
. Using this value of K, the values of P
D
P
× (T
D
= K ÷ (T
A
+ 273°C) + θ
J
+ 273°C)
Symbol
R1
JA
—
—
—
C
× (P
D
A
)
.
2
Value
1500
–2.5
100
7.5
1
D
and T
Equation 3
Electrical Characteristics
J
can be obtained by
Unit
pF
—
Ω
V
V
by measuring
D
and T
Eqn. 2
Eqn. 3
11
J