c8051t623-g Silicon Laboratories, c8051t623-g Datasheet - Page 31
c8051t623-g
Manufacturer Part Number
c8051t623-g
Description
Full Speed Usb Eprom Mcu Family
Manufacturer
Silicon Laboratories
Datasheet
1.C8051T623-G.pdf
(247 pages)
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Table 6.5. Internal Voltage Regulator Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Table 6.6. EPROM Electrical Characteristics
Parameter
Voltage Regulator (REG0)
Input Voltage Range
Output Voltage (V
Output Current
VBUS Detection Input
Threshold
Bias Current
Dropout Voltage (V
Voltage Regulator (REG1)
Input Voltage Range
Bias Current
Notes:
Parameter
EPROM Size
Write Cycle Time (per Byte)
(Note 2)
In-Application Programming
Write Cycle Time (per Byte)
(Note 3)
Programming Voltage (V
Capacitor on V
cation Programming
Notes:
1. Input range specified for regulation. When an external regulator is used, should be tied to
2. Output current is total regulator output, including any current required by the C8051T622/3 and C8051T326/7.
3. The minimum input voltage is 2.7 V or
1. 512 bytes at location 0x3E00 to 0x3FFF are not available for program storage
2. For devices with a Date Code prior to 1111, the programming time over the C2 interface is twice as long.
3. Duration of write time is largely dependent on VIO voltage, supply voltage, and residual charge on the VPP
capacitor. The majority of the write time consists of charging the voltage on VPP to 6.0 V. These
measurements include the VPP ramp time and VDD = VIO = 3.3 V
2
PP
DD
for In-appli-
DO
1, 3
)
2
)
3
PP
)
Conditions
Output Current = 1 to 100 mA
Normal Mode (REG0MD = 0)
Low Power Mode (REG0MD = 1)
I
I
Normal Mode (REG1MD = 0)
Low Power Mode (REG1MD = 1)
DD
DD
Conditions
C8051T622/326/327 (Note 1)
C8051T623
Capacitor on V
fully discharged
Capacitor on V
initially charged to 3.3 V
= 1 mA
= 100 mA
C8051T622/3 and C8051T326/7
V
DD
+
PP
PP
V
Rev. 1.1
= 4.7 µF and
= 4.7 µF and
DO
(max load), whichever is greater.
16384
8192
5.75
Min
105
—
—
—
Min
2.7
3.3
2.5
1.8
—
—
—
—
—
—
—
Typ
155
6.0
4.7
37
26
—
—
3.45
Typ
100
340
83
43
—
—
—
—
—
1
Max
6.25
205
—
—
—
—
—
V
DD
Max
5.25
100
425
185
3.6
3.6
.
99
55
—
—
—
Units
Bytes
mV/mA
ms
ms
µF
µs
Units
V
mA
µA
µA
V
V
V
V
31
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