si7682dp Vishay, si7682dp Datasheet - Page 4

• Manufacturer Part Number: si7682dp
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7682DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
0.4
0.2
0.0
0.1
40
10
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
- Temperature (°C)
25
50
0.6
I
D
75
T
= 250
J
0.8
= 25 °C
0.01
100
0.1
100
10
µA
1
0.1
Limited by
R
Safe Operating Area, Junction-to-Ambient
* V
DS(on)
1.0
125
GS
Single Pulse
> minimum V
*
T
A
V
1.2
150
= 25 °C
DS
- Drain-to-Source Voltage (V)
1
GS
at which R
DS(on)
10
200
160
120
0.05
0.04
0.03
0.02
0.01
0.00
80
40
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 ms
1 ms
100 ms
1 s
10 s
dc
2
0.01
100
T
V
J
GS
= 25 °C
- Gate-to-Source Voltage (V)
4
Time (s)
S09-0272-Rev. B, 16-Feb-09
0.1
Document Number: 73350
6
T
J
I
D
= 125 °C
1
= 11 A
8
10
10