ap15n03gp ETC-unknow, ap15n03gp Datasheet - Page 2

• Manufacturer Part Number: ap15n03gp
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: ETC-unknow

ΔBV
BV
R
V
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP15N03GP
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
S
SM
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
Forward On Voltage
Parameter
Parameter
2
2
2
j
j
j
=25
=150
=25
o
C)
o
C)
o
C(unless otherwise specified)
1
V
Reference to 25℃, I
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
D
D
j
GS
GS
GS
DS
DS
DS
GS
DS
GS
DS
G
D
GS
DS
D
=8A
=8A
=25℃, I
=V
=1.9Ω
=3.3Ω,V
=0V, I
=10V, I
=4.5V, I
=V
=30V, V
=24V, V
=
=24V
=5V
=15V
=0V
=25V
G
± 20V
GS
=0V , V
Test Conditions
Test Conditions
, I
D
S
D
=15A, V
=250uA
D
D
GS
=250uA
GS
GS
=8A
=6A
=10V
=0V
=0V
S
=1.3V
GS
D
=0V
=1mA
Min.
Min.
30
1
-
-
-
`
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.037
Typ.
19.8
Typ.
260
144
5.4
1.3
3.6
3.6
3.2
13
13
-
-
-
-
-
-
-
-
-
-
Max. Units
±100
Max. Units
100
1.3
80
25
15
50
3
1
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
uA
uA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
A
V
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