cat660 Catalyst Semiconductor, cat660 Datasheet - Page 3

• Manufacturer Part Number: cat660
• Description: 100ma Cmos Charge Pump Inverter/doubler
• Manufacturer: Catalyst Semiconductor

ABSOLUTE MAXIMUM RATINGS
V+ to GND ............................................................. 6V
Input Voltage (Pins 1, 6 and 7) .. -0.3V to (V+ + 0.3V)
BOOST/FC and OSC Input Voltage ........... The least
negative of (Out - 0.3V) or (V+ - 6V) to (V+ + 0.3V)
Output Short-circuit Duration to GND .............. 1 sec.
(OUT may be shorted to GND for 1 sec without damage but
shorting OUT to V+ should be avoided.)
Continuous Power Dissipation (T
ELECTRICAL CHARACTERISTICS
V+ = 5V, C1 = C2 = 150 F, Boost/FC = Open, C
otherwise noted. Temperature is over operating ambient temperature range unless otherwise noted.
Note 1. In Figure 1, test circuit capacitors C1 and C2 are 150 F and have 0.2 maximum ESR. Higher ESR levels may reduce efficiency and output
voltage.
Note 2. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and efficiency
keep external capacitor ESR under 0.2 .
Note 3. FOSC is tested with C
at OSC when the device is inserted into a test socket without an external C
Parameter
Supply Voltage
Supply Current
Output Current
Output Resistance
Oscillator Frequency FOSC
(Note 3)
OSC Input Current
Power Efficiency
Voltage Conversion
Efficiency
Plastic DIP ................................................ 730mW
SOIC ......................................................... 500mW
TDFN ............................................................... 1W
VEFF
Symbol
IOUT
IOSC
OSC
RO
VS
PE
IS
= 100pF to minimize test fixture loading. The test is correlated back to C
A
= 70 C)
Conditions
Inverter: LV = Open. R
Inverter: LV = GND. R
Doubler: LV = OUT. R
BOOST/FC = open, LV = Open
BOOST/FC = V+ , LV = Open
OUT is more negative than -4V
I
BOOST/FC = V+ (C1, C2 ESR
I
BOOST/FC = Open
BOOST/FC = V+
BOOST/FC = Open
BOOST/FC = V+
R
OUT, T
R
OUT, T
I
No load, T
L
L
L
L
L
= 100mA, C1 = C2 = 150 F (Note 2)
= 100mA, C1 = C2 = 10 F
= 100mA to GND, T
= 1k connected between V+ and
= 500 connected between GND and
A
A
= 25 C (Doubler)
= 25 C (Inverter)
OSC
A
= 25 C
= 0pF, inverter mode with test circuit as shown in Figure 1 unless
3
A
L
L
Storage Temperature ......................... -65 C to 160 C
Lead Soldering Temperature (10 sec) ............. 300 C
Note: T
These are stress ratings only and functional operation is not
implied. Exposure to absolute maximum ratings for prolongued
time periods may affect device reliability. All voltages are with
respect to ground.
L
OSC
= 1k
= 1k
= 25 C (Inverter)
= 1k
.
Operating Ambient Temperature Range
CAT660E .............. -40 C to 85 C
A
= Ambient Temperature
0.5 )
Min
100
3.0
1.5
2.5
40
96
92
99
5
OSC
=0pF to simulate the capacitance
0.09
99.9
Typ
0.3
10
80
98
96
88
4
1
5
Doc. No. MD-5000, Rev. W
Max
5.5
5.5
5.5
0.5
12
3
7
Units
kHz
mA
mA
%
%
V
A