lm96163cisdx-1 National Semiconductor Corporation, lm96163cisdx-1 Datasheet - Page 4

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lm96163cisdx-1

Manufacturer Part Number
lm96163cisdx-1
Description
Remote Diode Digital Temperature Sensor With Integrated Fan Control And Trutherm Bjt Transistor Beta Compensation Technology
Manufacturer
National Semiconductor Corporation
Datasheet
www.national.com
Temperature Error Using the Remote
Thermal Diode of an Intel Processor on
45nm (Note 8). For other processors e-mail
hardware.monitor.team@nsc.com to obtain
the latest data.
Temperature Error Using the Local Diode
(Note 10)
Remote Diode Resolution
Local Diode Resolution
Conversion Time, All Temperature Channels Fastest Setting
D− Source Voltage
Diode Source Current
Diode Source Current Ratio
V
I
Symbol
S
POR
Absolute Maximum Ratings
DC Electrical Characteristics
TEMPERATURE-TO-DIGITAL CONVERTER CHARACTERISTICS
The following specifications apply for V
specified in the conditions. Boldface limits apply for T
T
Operating Electrical Characteristics
Supply Voltage, V
Voltage on SMBDAT,
Voltage on Other Pins
Input Current, D− Pin (Note
3)
Input Current at All Other
Pins (Note 3)
Package Input Current (Note
3)
SMBDAT, ALERT, PWM
pins
Output Sink Current
Package Power Dissipation
D
SMBCLK,
 ALERT, TCRIT, TACH,
PWM Pins
is the junction temperature of the remote thermal diode. T
Power-On-Reset Threshold Voltage
Supply Current (Note 11)
Parameter
DD
Parameter
−0.3 V to (V
DD
= 3.0 VDC to 3.6 VDC, and all analog source impedance R
T
T
T
T
T
(V
Low Current
A
A
A
A
A
−0.3 V to 6.0 V
−0.5 V to 6.0 V
D+
= +25°C to +85°C
= +25°C to +85°C
= -40°C to +25°C
= +25°C to +125°C
= -40°C to +25°C
(Notes 1, 2)
DD
− V
+ 0. 3 V)
(Note 5)
D−
±1 mA
30 mA
10 mA
) = +0.65 V; High Current
5 mA
A
= T
J
J
= T
is the junction temperature of the LM96163.
Conditions
SMBus Inactive, 13 Hz
Conversion Rate
SMBus Inactive, 0.8 Hz
Conversion Rate
STANDBY Mode
4
MIN
Operating Ratings
Soldering
Semiconductor's Reflow Temperature Profile specifications.
Refer to www.national.com/packaging. (Note 6)
T
T
Junction Temperature
T
T
Junction Temperature
Storage Temperature
ESD Susceptibility (Note 4)
Specified Temperature Range
Remote Diode Temperature Range -40°C
Supply Voltage Range (V
to T
D
D
D
D
Human Body Model
Machine Model
Charged Device Model
LM96163CISD
= +50°C to +105°C
= Remote Diode
= +40°C to +125°C
= +25°C to +125°C
Conditions
MAX
; all other limits T
process
must
A
DD
= +25°C; unless otherwise noted.
(Note 7)
)
(Note 7)
Typ
Typical
456
416
1.1
0.125
10.75
38.3
172
0.4
±1
11
16
8
1
(Notes 1, 2)
S
comply
= 50Ω unless otherwise
–40°C
(Note 9)
(Note 9)
Limits
Limits
±0.75
T
±1.5
±3.0
41.1
825
700
225
100
−65°C to +150°C
2.8
1.6
1.6
±3
±6
+3.0 V to +3.6 V
MIN
with
T
T
D
T
A
A
ms (max)
National
°C (max)
°C (max)
°C (max)
°C (max)
°C (max)
µA (max)
+140°C
mA (max)
µA (min)
(Limits)
µA (max)
µA (max)
2500 V
1000 V
V (max)
125°C
+85°C
V (min)
Units
250 V
Units
Bits
Bits
T
µA
°C
°C
V
MAX

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