bd63847 ROHM Co. Ltd., bd63847 Datasheet - Page 18

• Manufacturer Part Number: bd63847
• Description: Micro Step 36v Stepper Motor Drivers
• Manufacturer: ROHM Co. Ltd.

●Selecting a model name when ordering
© 2010 ROHM Co., Ltd. All rights reserved.
BD63847/63843EFV
www.rohm.com
HTSSOP-B28
(12) Input terminal of IC
(13) Ground Wiring Pattern
(14) TEST pin
ROHM model
This IC is a monolithic IC, and between each element there is a P+ isolation for element partition and a P substrate.
This P layer and each element’s N layer make up the P-N junction, and various parasitic elements are made up.
For example, when the resistance and transistor are connected to the terminal as shown in figure A,
Because of the IC’s structure, the creation of parasitic elements is inevitable from the electrical potential relationship. The
operation of parasitic elements causes interference in circuit operation, and can lead to malfunction and destruction.
Therefore, be careful not to use it in a way which causes the parasitic elements to operate, such as by applying voltage
that is lower than the GND (P substrate) to the input terminal.
When using both large current and small signal GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change
the GND wiring pattern of any external components, either.
Be sure to connect TEST pin to GND.
0.625
B
Parasitic element
(MAX 10.05 include BURR)
Pin A
D
28
1
0.65
N P
9.7±0.1
(5.5)
+
0.24
1PIN MARK
○When GND＞(Terminal A) at the resistance and GND＞(Terminal B) at the transistor (NPN),
○Also, when GND＞(Terminal B) at the transistor (NPN)
N
+0.05
-0.04
6
the P-N junction operates as a parasitic diode.
The parasitic NPN transistor operates with the N layers of other elements close to the aforementioned
parasitic diode.
14
15
0.08 S
0.08
GND
3
Part number
P
M
S
P substrate
4°
P
8
0.17
+ 6°
−4°
+
(Unit : mm)
+0.05
-0.03
N
Resistor
4
Fig. A Pattern diagram of parasitic element
Pin A
3
<Tape and Reel information>
Tape
Quantity
Direction
of feed
Package type
EFV=HTSSOP-B28
Parasitic
element
E
18/19
Embossed carrier tape (with dry pack)
2500pcs
E2
(
Reel
Parasitic element
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
F
Pin B
N
V
P
+
C
1pin
∗
Order quantity needs to be multiple of the minimum quantity.
－
N
GND
E2 = Reel-wound embossed taping
P
B
E
E
P substrate
Transistor (NPN)
P
+
2
N
GND
Direction of feed
Other adjacent elements
Pin B
Technical Note
2010.4 - Rev.A
B
C
E
GND
)
Parasitic
element