mic4100 Micrel Semiconductor, mic4100 Datasheet
mic4100
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mic4100 Summary of contents
Page 1
... HS slewing with high speed voltage transitions. Under- voltage protection is provided on both the low-side and high-side drivers. The MIC4100 is available in the SOIC-8L package with a junction operating range from –40°C to +125°C. Data sheets and support documentation can be found on Micrel’s web site at www.micrel.com. ...
Page 2
... High-Side Source connection. Connect to source of High-Side power MOSFET. Connect negative side of bootstrap capacitor to this pin. High-Side input. Low-Side input. Chip negative supply, generally will be ground. Low-Side Output. Connect to gate of Low-Side power MOSFET. 2 Package –40° to +125°C SOIC-8L –40° to +125°C SOIC-8L VSS LI HI MIC4100/1 M9999-031506 ...
Page 3
... DD Total HB Quiescent Current Total HB Operating Current Current, Quiescent Current, Operating SS Input Pins: MIC4100 (CMOS Input ) Low Level Input Voltage Threshold High Level Input Voltage Threshold Input Voltage Hysteresis Input Pulldown Resistance R Input Pins: MIC4101 (TTL) Low Level Input Voltage ...
Page 4
... VDD- 100mA OLL -100mA OHL LO OHL 12V 100mA OLH -100mA – V OHH HO OHH 12V HO 4 Min Typ Max 7.4 6.5 8.0 0.5 7.0 6.0 8.0 0.4 0.4 0.55 0.70 0.7 0.8 1.0 1.0 1.5 2.0 0.22 0.3 0.4 0.25 0 0.22 0.3 0.4 0.25 0 MIC4100/1 Units Ω M9999-031506 ...
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... LPHL t (MIC4101) HPHL t (MIC4101) LPLH t (MIC4101) HPLH t MON t MOFF 1000pF 0.1 µ Note MIC4100/1 Min Typ Max Units ...
Page 6
... Micrel, Inc. Timing Diagrams HI HPLH t LPLH HO,LO Note: All propagation delays are measured from the 50% voltage level. March 2006 t HPLH t LO LPLH MON MOFF MIC4100/1 M9999-031506 ...
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... Micrel, Inc. Typical Characteristics March 2006 7 MIC4100/1 M9999-031506 ...
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... Micrel, Inc. Typical Characteristics (cont.) March 2006 8 MIC4100/1 M9999-031506 ...
Page 9
... Micrel, Inc. Functional Diagram March 2006 LEVE L UVLO SHIFT UVLO Figure 1. MIC4100 Functional Block Diagram DRIVER HS LO DRIVER MIC4100/1 M9999-031506 ...
Page 10
... The MIC4100 is a high voltage, non-inverting, dual MOSFET driver that is designed to independently drive both high-side and low-side N-Channel MOSFETs. The block diagram of the MIC4100 is shown in Figure 1. Both drivers contain an input buffer with hysteresis, a UVLO circuit and an output buffer. The high-side output buffer includes a high speed level-shifting circuit that is referenced to the HS pin ...
Page 11
... Vin. As the HS and HB pin rise, the internal diode is reverse biased preventing capacitor C discharging. C External FET applied to the gate of the upper external Vdd VDD Level HI HO shift Vss Figure 5 MIC4100/1 to charge from B Vin Q1 Lout Vout Cout Q2 M9999-031506 ...
Page 12
... Reverse Recovery RRM = t Reverse Recovery Time Pdiode Pdiode Pdiode total fwd = × × − REV R REV = I : Reverse current flow Diode Reverse Voltage REV = = D Duty Cycle switching frequency of the MIC4100/1 Current RR and T REV J power supply M9999-031506 ...
Page 13
... B delivered to the MOSFET is dissipated in the three resistive components, Ron, Rg and Rg_fet. Ron is the on resistance of the upper driver MOSFET in the MIC4100 the series resistor (if any) between the driver IC and the MOSFET. Rg_fet is the gate resistance of the MOSFET. Rg_fet is usually listed in the power MOSFET’s specifications ...
Page 14
... Ron Supply Current Power Dissipation Power is dissipated in the MIC4100 even if is there i nothing being driven. The supply current is drawn by the bias for the internal circuitry, the level shifting circuitry and shoot-through current in the output drivers. The supply current is proportional to operating frequency and the Vdd and Vhb voltages ...
Page 15
... Grounding, Component Placement and Circuit Layout Nanosecond switching speeds and am in and around the MIC4100 and MIC4101 drivers require proper placement and trace routing of all components. Improper placement may cause degraded noise immunity, false switching, excessive ringing or circuit latch-up. ...
Page 16
... A ground plane should be used to minimize parasitic inductance and impedance of the return paths. The MIC4100 is capable of greater than 2A peak currents and any impedance between the MIC4100, the decoupling capacitors and the external MOSFET will degrade the performance of the driver ...
Page 17
... Cin is used to decouple the high current path through the MOSFETs. Low-side FET HS Node (switching node) GND (FET Source) MIC4100 LO Vss LI HI Figure 12 17 and C are placed to minimize etch length B VDD when the HS node is low. All traces are B GND HO trace MIC4100/1 M9999-031506 ...
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... Purchaser’s use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fully March 2006 8-Pin SOIC (M) indemnify Micrel for any damages resulting from such use or sale. © 2004 Micrel, Incorporated. 18 MIC4100/1 nt M9999-031506 ...