ncp362 ON Semiconductor, ncp362 Datasheet - Page 12

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ncp362

Manufacturer Part Number
ncp362
Description
Usb Positive Overvoltage And Overcurrent Protection With Tvs For Vbus And Low Capacitance Esd Diodes For Data
Manufacturer
ON Semiconductor
Datasheet

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The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
IEC 61000−4−2 Spec.
Level
For sensitive circuit elements it is important to limit the
1
2
3
4
ESD Gun
Voltage
Test
(kV)
2
4
6
8
First Peak
Current
22.5
(A)
7.5
15
30
Current at
TVS
30 ns (A)
100
90
80
70
60
50
40
30
20
10
0
12
16
4
8
0
Figure 27. Diagram of ESD Test Setup
t
Cable
50 W
r
Figure 28. 8 X 20 ms Pulse Waveform
t
Figure 26. IEC61000−4−2 Spec
P
Current at
60 ns (A)
PEAK VALUE I
2
4
6
8
20
http://onsemi.com
Oscilloscope
HALF VALUE I
50 W
t, TIME (ms)
12
RSM
PULSE WIDTH (t
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
40
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping
voltage at the device level. ON Semiconductor has
developed a way to examine the entire voltage waveform
across the ESD protection diode over the time domain of
an ESD pulse in the form of an oscilloscope screenshot,
which can be found on the datasheets for all ESD protection
diodes. For more information on how ON Semiconductor
creates these screenshots and how to interpret them please
refer to AND8307/D.
100%
@ 8 ms
I
peak
90%
10%
I @ 30 ns
I @ 60 ns
RSM
/2 @ 20 ms
IEC61000−4−2 Waveform
P
60
) IS DEFINED
t
P
= 0.7 ns to 1 ns
80

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