mte125n20e Freescale Semiconductor, Inc, mte125n20e Datasheet - Page 6

• Manufacturer Part Number: mte125n20e
• Description: Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

MTE125N20E
1000
6
100
10
1
0.1
0.001
0.01
0.1
1.0E–05
V GS = 20 V
SINGLE PULSE
T C = 25°C
Figure 11. Maximum Rated Forward Biased
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
1
Safe Operating Area
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0E–04
10
Figure 14. Diode Reverse Recovery Waveform
I S
100
1.0E–03
SAFE OPERATING AREA
10 ms
Figure 13. Thermal Response
100 s
1 ms
dc
t p
1000
di/dt
t, TIME (s)
t a
1.0E–02
JUNCTION
CHIP
t rr
t b
I S
400
350
300
250
200
150
100
Motorola TMOS Power MOSFET Transistor Device Data
50
0
0.25 I S
25
Figure 12. Maximum Avalanche Energy versus
0.0 F
0.0174
T J , STARTING JUNCTION TEMPERATURE (°C)
1.0E–01
50
Starting Junction Temperature
TIME
0.0994 F
0.1409
75
0.5750 F
1.0E+00
0.1217
100
AMBIENT
I D = 125 A
125
1.0E+01
150