bcr164l3 Infineon Technologies Corporation, bcr164l3 Datasheet - Page 2

• Manufacturer Part Number: bcr164l3
• Description: Pnp Silicon Digital Transistor
• Manufacturer: Infineon Technologies Corporation

Thermal Resistance
Parameter
Junction - soldering point
BCR164F
BCR164L3
BCR164T
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
Collector-emitter saturation voltage
I
Input off voltage
I
Input on voltage
I
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1 For calculation of R
2 Pulse test: t < 300µs; D < 2%
C
C
C
C
C
C
C
CB
EB
CB
= 100 µA, I
= 10 µA, I
= 5 mA, V
= 10 mA, I
= 100 µA, V
= 2 mA, V
= 10 mA, V
= 10 V, I
= 40 V, I
= 10 V, f = 1 MHz
E
CE
CE
B
E
C
B
CE
= 0
CE
= 0.5 mA
= 0
= 0
= 0
2)
= 5 V
= 0.3 V
= 5 V, f = 100 MHz
thJA
= 5 V
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2)
2
Symbol
R
Symbol
V
V
I
I
h
V
V
V
R
R
f
C
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
cb
thJS
1
1
/ R
2
min.
0.42
0.5
0.5
3.2
50
50
30
-
-
-
-
-
Values
Value
0.47
typ.
160
4.7
165
3
90
60
-
-
-
-
-
-
-
-
max.
0.52
100
Sep-03-2003
520
0.3
1.1
1.4
6.2
BCR164...
-
-
-
-
-
MHz
pF
Unit
-
Unit
V
nA
µA
-
V
k
-