pssi5006 Power Semiconductors, Inc., pssi5006 Datasheet - Page 4

• Manufacturer Part Number: pssi5006
• Description: Igbt Module
• Manufacturer: Power Semiconductors, Inc.

E
E
I
CM
on
on
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
mJ
mJ
80
60
40
20
A
8
6
4
2
0
4
3
2
1
0
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
R
T
V
V
I
T
C
VJ
VJ
R
T
CE
GE
G
CE
GE
VJ
G
= 300V
= ±15V
= 33Ω
= 300V
= ±15V
= 125°C
= 30A
= 125°C
10
100
= 33 Ω
= 125°C
20
200
20
30
300
40
400
40
50
R
I
G
C
500
60
V
600
CE
60
70
E
t
©
t
d(on)
E
t
on
t
r
d(on)
r
25T60
on
25T60
A
Ω
25T60
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
700
80
80
60
40
20
0
ns
80
ns
60
40
20
V
t
t
E
E
Z
0,0001
off
thJC
off
0,001
0,01
K/W
2,0
1,5
1,0
0,5
0,0
mJ
0,1
mJ
0,00001 0,0001 0,001
2,0
1,5
1,0
0,5
0,0
10
1
0
PSIG PSI PSIS PSSI 50/06
Fig. 8 Typ. turn off energy and switching
0
Fig. 10 Typ. turn off energy and switching
Fig. 12
V
V
R
T
V
V
I
T
C
VJ
VJ
CE
GE
CE
GE
G
= 300 V
= ±15 V
= 33Ω
= 300V
= ±15V
= 30 A
= 125°C
= 125°C
10
times versus collector current times
versus collector current
times versus gate resistor times
versus gate resistor
20
Typ. transient thermal impedance
RBSOA
20
single pulse
30
0,01
40
40
50
R
0,1
G
I
C
t
60
1
60
VDI...50-06P1
t
t
70
E
d(off)
f
diode
IGBT
off
t
t
E
s
A
f
d(off)
Ω
25T60
off
25T60
10
80
400
300
200
100
0
ns
ns
400
300
200
100
0
t
t