pssi7506 Power Semiconductors, Inc., pssi7506 Datasheet - Page 4

• Manufacturer Part Number: pssi7506
• Description: Igbt Module
• Manufacturer: Power Semiconductors, Inc.

E
E
I
CM
on
on
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
10,0
120
7,5
5,0
2,5
0,0
mJ
mJ
90
60
30
A
4
3
2
1
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
E
on
100
10
200
40
20
300
30
R
T
VJ
G
400
= 22
= 125°C
R
80
40
I
G
C
500
V
V
I
T
V
V
R
T
C
VJ
VJ
CE
GE
CE
GE
G
= 300 V
= ±15 V
= 22
= 300 V
= ±15 V
= 125°C
= 50 A
= 125°C
V
50
A
600
CE
t
t
E
t
d(on)
r
t
d(on)
r
on
42T60
42T60
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
42T60
120
700
60
100
75
50
25
0
80
60
40
20
ns
ns
V
t
t
E
Z
E
0,0001
thJC
off
off
0,001
0,01
K/W
0,1
mJ
mJ
0,00001 0,0001 0,001
10
4
3
2
1
0
3
2
1
0
1
PSIG PSI PSIS PSSI 75/06
0
0
Fig. 8 Typ. turn off energy and switching
Fig. 10 Typ. turn off energy and switching
Fig. 12
10
times versus collector current times
versus collector current
times versus gate resistor times
versus gate resistor
Typ. transient thermal impedance
RBSOA
40
20
single pulse
V
V
I
T
C
VJ
CE
GE
0,01
= 300 V
= ±15 V
= 50 A
= 125°C
30
V
V
R
T
VJ
CE
GE
G
R
= 22
= 300 V
= ±15 V
= 125°C
80
0,1
40
G
I
C
t
50
A
1
t
t
t
E
f
E
d(off)
t
d(off)
VID...75-06P1
f
off
off
diode
IGBT
s
42T60
42T60
120
60
10
400
300
200
100
0
600
400
200
0
ns
ns
t
t