pssi45d-06 Power Semiconductors, Inc., pssi45d-06 Datasheet - Page 2

• Manufacturer Part Number: pssi45d-06
• Description: Igbt Module
• Manufacturer: Power Semiconductors, Inc.

Standard Diode
Symbol
I
V
V
I
I
V
r
R
Reverse diodes (FRED)
Symbol
I
I
Symbol
V
I
t
R
R
Module
Symbol
T
T
V
M
a
Symbol
d
d
Weight
FAVM
R
FSM
F25
F80
RM
T
rr
S
F
RRM
TO
VJ
stg
ISOL
A
thJC
F
thJC
thJH
d
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Test Conditions
rectangular, T
I
T
T
T
V
T
V
For power-loss calculations only (T
Standard Diode
Conditions
T
T
Conditions
I
I
V
with heatsink compound (0.42 K/m.K; 50 µm)
Conditions
I
Mounting torque (M4)
Max. allowable acceleration
Conditions
Creepage distance on surface
Strike distance in air
F
F
F
ISOL
J
J
VJ
VJ
R
R
C
C
R
= 25 °C
= 150 °C
= 60 A; T
= 60 A; di
= 80 A, T
= 0
= 0
= 25°C
= 80°C
= 300 V; V
= 45 °C
= T
1 mA; 50/60 Hz
VJM
T
J
F
VJ
VJ
/dt = 500 A/µs; T
GE
= 25 °C
J
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
= 150 °C
= 25°C
= 125°C
= 0 V
(Pin to heatsink)
VJ
VJ
(Pin to heatsink)
= 125°C
Characteristic Value
= T
VJM
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
)
Maximum Ratings
1200
800
880
720
790
min.
1.2
0.8
4.8
tbd
53
50
Characteristic Values
11.2
11.2
min. typ. max.
4
Characteristic Values
-40...+150
-40...+150
Maximum Ratings
1.5 - 2.0
1.78
1.33
1.32
14 - 18
100
typ.
28
24
m
K/W
3000
mA
134
µA
82
A
A
A
A
50
A
V
V
V
max.
1.99
0.66 K/W
K/W
lb.in.
m/s
N m
mm
mm
V~
n s
°C
°C
A
A
V
V
A
g
2
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSSI 45D/06
PSSI 46D/06
PSSI 45/46D