s-8241abtmc-gbtt2g Seiko Instruments Inc., s-8241abtmc-gbtt2g Datasheet - Page 16

• Manufacturer Part Number: s-8241abtmc-gbtt2g
• Description: Battery Protection Ic For 1-cell Pack
• Manufacturer: Seiko Instruments Inc.

16
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series
(5) Test Condition 5, Test Circuit 1
(6) Test Condition 6, Test Circuit 1
(7) Test Condition 7, Test Circuit 1
(8) Test Condition 8, Test Circuit 1
(9) Test Condition 9, Test Circuit 1
(Internal resistance between VM and VDD, Internal resistance between VM and VSS)
(CO pin H resistance, CO pin L resistance)
(DO pin H resistance, DO pin L resistance)
(Overcharge detection delay time, Overdischarge detection delay time)
(Overcurrent 1 detection delay time, Overcurrent 2 detection delay time, Load short-circuiting detection delay
time, Abnormal charge current detection delay time)
Set V1 = 1.8 V and V2 = 0 V under overdischarge condition. Measure current I
gives the internal resistance (R
Set V1 = V2 = 3.5 V under overcurrent condition. Measure current I
internal resistance (R
Set V1 = 3.5 V, V2 = 0 V and V3 = 3.0 V under normal condition. Measure current I
|I
Set V1 = 4.5 V, V2 = 0 V and V3 = 0.5 V under overcharge condition. Measure current I
V / |I
Set V1 = 3.5 V, V2 = 0 V and V4 = 3.0 V under normal condition. Measure current I
|I
Set V1 = 1.8 V, V2 = 0 V and V4 = 0.5 V under overdischarge condition. Measure current I
0.5 V / |I
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V1 gradually to overcharge detection voltage V
and increase V1 to the overcharge detection voltage V
the overcharge detection voltage until V
Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V1 gradually to overdischarge detection voltage V
0.2 V and decrease V1 to the overdischarge detection voltage V
becomes the overdischarge detection voltage V
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 0.35 V momentarily (within 10 µs). The
time after V2 becomes overcurrent 1 detection voltage (V
(t
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 0.7 V momentarily (within 1 µs). The time
after V2 becomes overcurrent 1 detection voltage (V
Caution The overcurrent 2 detection delay time starts when the overcurrent 1 is detected, since the delay
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 3.0 V momentarily (within 1 µs). The time
after V2 becomes the load short-circuiting detection voltage (V
detection delay time (t
Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V2 from 0 V to -2.5 V momentarily (within 10 µs). The
time after V2 becomes the charger detection voltage (V
delay time. The abnormal charge current detection delay time has the same value as the overcharge detection delay
time.
CO
DO
IOV1
| is the CO pin H resistance (R
| gives the DO pin H resistance (R
CO
).
| is the CO pin L resistance (R
DO
| gives the DO pin L resistance (R
circuit is common.
VMS
SHORT
) between VM and VSS.
).
VMD
COH
) between VM and VDD.
COL
).
DOH
CO
).
).
goes "L" is the overcharge detection delay time (t
Seiko Instruments Inc.
DOL
).
DL
until V
IOV1
CU
CHA
) until V
+ 0.2 V momentarily (within 10 µs). The time after V1 becomes
DO
IOV1
) until V
goes "L" is the overdischarge detection delay time (t
) until V
DO
DL
SHORT
- 0.2 V momentarily (within 10 µs). The time after V1
CO
goes "L" is overcurrent 2 detection delay time (t
VM
goes "L" is the abnormal charge current detection
DO
) until V
flowing through VM pin. 3.5 V / |I
goes "L" is overcurrent 1 detection delay time
DO
VM
goes "L" is the load short-circuiting
flowing through VM pin. 1.8V / |I
CO
DO
flowing through CO pin. 0.5 V /
flowing through DO pin. 0.5 V /
CO
flowing through CO pin. 0.5
DO
CU
).
flowing through DO pin.
Rev.7.9
VM
| gives the
CU
- 0.2 V
DL
IOV2
_00
).
DL
VM
+
).
|