ncp1294edtb16r2g ON Semiconductor, ncp1294edtb16r2g Datasheet - Page 5

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ncp1294edtb16r2g

Manufacturer Part Number
ncp1294edtb16r2g
Description
Enhanced Voltage Mode Pwm Controller
Manufacturer
ON Semiconductor
Datasheet
ELECTRICAL CHARACTERISTICS
R
Gate Driver
Feed Forward (FF)
Overcurrent Protection
External Voltage Monitors
Soft−Start (SS)
Blanking
Thermal Shutdown
3. Guaranteed by design, not 100% tested in production.
T
High Saturation Voltage
Low Saturation Voltage
High Voltage Clamp
Output Current
Output UVL Leakage
Rise Time
Fall Time
Max Gate Voltage During UVL/Sleep
Discharge Voltage
Discharge Current
FF to GATE Delay
Overcurrent Threshold
I
Overvoltage Threshold
Overvoltage Hysteresis Current
Undervoltage Threshold
Undervoltage Hysteresis
Charge Current
Discharge Current
Charge Voltage
Discharge Voltage
Soft−Start Clamp Offset
Soft−Start Fault Voltage
Blanking Time
SS Blanking Disable Threshold
COMP Blanking Disable Threshold
Thermal Shutdown
Thermal Hysteresis
SENSE
= 12 k; C
to GATE Delay
T
Characteristic
= 390 pF; unless otherwise specified.)
(−40°C < T
V
GATE − PGND, I
1.0 nF Load. Note 3
GATE = 0 V
1.0 nF Load, V
1.0 nF Load, V
I
I
FF = 1.0 V
I
OV Increasing
OV = 2.15 V
UV Increasing
SS = 2.0 V
SS = 2.0 V
FF = 1.25 V
OV = 2.15 V or LV = 0.85 V
V
V
Note 3
Note 3
GATE
FF
SET
C
FB
FB
− GATE, V
= 2.0 mA
< 1.0
< 1.0, SS > 3.0 V
= 0.5 V, Ramp I
= 500 mA
A
< 85°C; −40°C < T
C
Test Conditions
C
C
http://onsemi.com
= 10 V, I
= 20 V, 1.0 V < GATE < 9.0 V
= 20 V, 9.0 V < GATE < 1.0 V
SINK
SENSE
= 200 mA
SOURCE
5
J
< 125°C; 3.0 V < V
= 200 mA
C
< 15 V; 4.7 V < V
0.475
0.95
0.25
1.15
Min
125
0.4
2.0
1.9
4.0
2.8
2.8
2.8
5.0
50
50
10
25
40
50
11
13.5
12.5
1.25
Typ
150
150
1.5
1.2
1.0
1.0
0.7
0.3
0.5
2.0
1.0
5.0
3.0
0.3
0.1
3.0
3.0
60
25
16
75
90
75
50
10
CC
< 15 V;
0.525
Max
1.25
1.05
0.35
1.35
100
125
125
125
250
180
2.0
1.5
1.0
0.7
2.1
7.0
3.4
0.2
3.3
3.3
16
50
50
30
15
70
15
Unit
mA
mV
mA
mA
mA
mA
°C
°C
ns
ns
ns
ns
ns
V
V
V
A
V
V
V
V
V
V
V
V
V
V
V

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