hm62g36256 Renesas Electronics Corporation., hm62g36256 Datasheet - Page 5

no-image

hm62g36256

Manufacturer Part Number
hm62g36256
Description
8m Synchronous Fast Static Ram 256k-word X 36-bit - Hitachi Semiconductor
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
hm62g36256ABP30
Manufacturer:
SONY
Quantity:
200
Part Number:
hm62g36256ABP30
Manufacturer:
RENESAS
Quantity:
1 000
Part Number:
hm62g36256ABP30
Manufacturer:
RENESAS
Quantity:
10 000
Part Number:
hm62g36256ABP30
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Operation Table
ZZ SS G
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
Notes: 1.
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
2. SWE, SS, SWEa to SWEd, SA are sampled at the rising edge of K clock.
3. Although differential clock operation is implied, this SRAM will operate properly with one clock
H
L
phase (either K or K) tied to V
specified within this document will be met.
means don’t care for synchronous inputs, and H or L for asynchronous inputs.
SWE
H
L
L
L
L
L
L
L
L
L
L
L
L
L
SWEa SWEb SWEc SWEd K
L
H
L
L
L
H
L
L
H
H
H
H
L
L
L
H
L
L
H
H
L
L
H
H
L
H
L
L
L
H
L
L
H
H
L
H
L
H
H
REF
. Under such single-ended clock operation, all parameters
L
L
L
L
H
L
L
H
H
L
H
H
H
L-H H-L Dead
L-H H-L Read
L-H H-L Write a, b, c, d
L-H H-L Write b, c, d
L-H H-L Write a, c, d
L-H H-L Write a, b, d
L-H H-L Write a, b, c
L-H H-L Write c, d byte High-Z
L-H H-L Write a, d byte High-Z
L-H H-L Write a, b byte High-Z
L-H H-L Write b, c byte High-Z
L-H H-L Write d byte
L-H H-L Write c byte
L-H H-L Write b byte
L-H H-L Write a byte
K
Operation
sleep mode
(not selected)
Dead
(Dummy read)
byte
byte
byte
byte
byte
HM62G36256 Series
DQ (n)
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
DQ (n + 1)
High-Z
High-Z
High-Z
Dout
(a,b,c,d)0-8
Din (a,b,c,d)0-8
Din (b,c,d)0-8
Din (a,c,d)0-8
Din (a,b,d)0-8
Din (a,b,c)0-8
Din (c,d)0-8
Din (a,d)0-8
Din (a,b)0-8
Din (b,c)0-8
Din (d)0-8
Din (c)0-8
Din (b)0-8
Din (a)0-8
5

Related parts for hm62g36256