hm62w16256b Renesas Electronics Corporation., hm62w16256b Datasheet - Page 8

• Manufacturer Part Number: hm62w16256b
• Description: 4 M Sram 256-kword X 16-bit - Hitachi Semiconductor
• Manufacturer: Renesas Electronics Corporation.

HM62W16256B Series
Write Cycle
Parameter
Write cycle time
Address valid to end of write
Chip selection to end of write
Write pulse width
LB, UB valid to end of write
Address setup time
Write recovery time
Data to write time overlap
Data hold from write time
Output disable to output in High-Z t
Write to output in high-Z
Notes: 1. t
8
Output active from end of write
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t
4. A write occures during the overlap of a low CS1, a high CS2, a low WE and a low LB or a low UB.
5. t
6. t
7. t
conditions and are not referred to output voltage levels.
and from device to device.
A write begins at the latest transition among CS1 going low, CS2 going high, WE going low and LB
going low or UB going low. A write ends at the earliest transition among CS1 going high, CS2
going low, WE going high and LB going high or UB going high. t
of write to the end of write.
cycle.
CHZ
CW
AS
WR
is measured from the address valid to the beginning of write.
, t
is measured from the later of CS1 going low or CS2 going high to the end of write.
is measured from the earliest of CS1 or WE going high or CS2 going low to the end of write
OHZ
, t
WHZ
and t
BHZ
are defined as the time at which the outputs achieve the open circuit
Symbol
t
t
t
t
t
t
t
t
t
t
t
WC
AW
CW
WP
BW
AS
WR
DW
DH
OW
OHZ
WHZ
HM62W16256B
-5
Min
55
50
50
40
50
0
0
25
0
5
0
0
Max
—
—
—
—
—
—
—
—
—
—
20
20
HZ
max is less than t
-7
Min
70
60
60
50
55
0
0
30
0
5
0
0
WP
is measured from the beginning
Max
—
—
—
—
—
—
—
—
—
—
25
25
LZ
min both for a given device
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
5
4
6
7
2
1, 2
1, 2