r1lv0408c-c Renesas Electronics Corporation., r1lv0408c-c Datasheet - Page 12

• Manufacturer Part Number: r1lv0408c-c
• Description: 4m Sram 512-kword X 8-bit
• Manufacturer: Renesas Electronics Corporation.

R1LV0408C-C Series
Low V
(Ta = −20 to +70°C)
Parameter
V
Data
retention
current
Chip deselect to data retention time
Operation recovery time
Notes: 1. Typical values are at V
Low V
Rev.2.00, May.25.2004, page 12 of 12
CC
0 V
V
2.2 V
V
2.7 V
CS#
CC
DR
for data retention
CC
2. Typical values are at V
3. CS# controls address buffer, WE# buffer, OE# buffer, and Din buffer. In data retention mode,
4. t
CC
Data Retention Timing Waveform (CS# Controlled)
Vin levels (address, WE#, OE#, I/O) can be in the high impedance state.
RC
Data Retention Characteristics
−5SC
−7LC
= read cycle time.
t
CDR
to +70°C
to +40°C
to +25°C
to +70°C
to +40°C
to +25°C
CC
CC
= 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
= 3.0 V, Ta = +40°C and specified loading, and not guaranteed.
Symbol Min Typ
V
I
I
I
I
I
I
t
t
CCDR
CCDR
CCDR
CCDR
CCDR
CCDR
CDR
R
DR
Data retention mode
CS# ≥ V
2






0
t
RC
*
4
CC


0.7*
0.5*

0.7*
0.5*


– 0.2 V
2
1
2
1
Max Unit Test conditions*

8
3
3
16
10
10


V
µA
µA
µA
µA
µA
µA
ns
ns
CS# ≥ V
V
CS# ≥ V
See retention waveform
CC
= 3.0 V, Vin ≥ 0 V
CC
CC
− 0.2 V, Vin ≥ 0 V
− 0.2 V
t
R
3