x28ht512 Intersil Corporation, x28ht512 Datasheet - Page 8

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x28ht512

Manufacturer Part Number
x28ht512
Description
High Temperature, 5 Volt, Byte Alterable E2prom
Manufacturer
Intersil Corporation
Datasheet
X28HT512
CE Controlled Write Cycle
Page Write Cycle
Notes: (5) Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE HIGH
ADDRESS *
ADDRESS
DATA OUT
DATA IN
(6) The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform
WE
OE
CE
OE
to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively performing
a polling operation.
to either the CE or WE controlled write cycle timing.
WE
CE
I/O
(5)
(6)
*For each successive write within the page write operation, A 7 –A 15 should be the same or
writes to an unknown address could occur.
t WP
t OES
t AS
t CS
BYTE 0
t DV
t WPH
BYTE 1
t AH
t BLC
t CW
HIGH Z
t DS
BYTE 2
8
DATA VALID
t OEH
BYTE n
t WC
t CH
t DH
t WPH
BYTE n+1
LAST BYTE
BYTE n+2
t WC
6614 FHD F07
6614 FHD F08

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