is43dr16128 Integrated Silicon Solution, Inc., is43dr16128 Datasheet - Page 21

• Manufacturer Part Number: is43dr16128
• Description: 2gb X16 Ddr2 Sdram
• Manufacturer: Integrated Silicon Solution, Inc.

IS43/46DR16128
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00B, 3/28/2011
Input Setup Time (fast
slew rate)
Input Hold Time (fast slew
rate)
Input Pulse Width
Write DQS High Level
Width
Write DQS Low Level
Width
CLK to First Rising Edge of
DQS‐In
Data‐In Setup Time to
DQS‐In (DQ, DM)
Data‐In Hold Time to
DQS‐In (DQ, DM)
DQS falling edge from CLK
rising Setup Time
DQS falling edge from CLK
rising Hold Time
DQ & DM Pulse Width
Read DQS Preamble Time
Read DQS Postamble
Time
Write DQS Preamble
Setup Time
Write DQS Preamble Hold
Time
Write DQS Preamble Time
Write DQS Postamble
Time
Internal Read to
Precharge Command
Delay
Internal Write to Read
Command Delay
Data‐Out to High
Impedance from CK/CK#
DQS/DQS# Low
Impedance from CK/CK#
Parameter
tLZ(DQS)
tWPREH
tWPRES
Symbol
tWPRE
tDQSH
tWPST
tDQSL
tDQSS
tDIPW
tRPRE
tRPST
tWTR
tIPW
tDSH
tDSS
tRTP
tDH
tDS
tHZ
tIH
tIS
0.35
0.35
0.35
0.25
0.35
DDR2‐533C DDR2‐667D DDR2‐800E
Min Max Min Max Min Max Min
250
375
100
225
0.6
0.2
0.2
0.9
0.4
0.4
7.5
7.5
0
‐37C
1.1
0.6
0.6
Min = tAC(min), Max = tAC(max)
Min = ‐0.25tCK, Max = +0.25tCK
0.35
0.35
0.35
0.25
0.35
200
275
100
175
Min = n/a, Max = tAC(max)
0.6
0.2
0.2
0.9
0.4
0.4
7.5
7.5
0
‐3D
1.1
0.6
0.6
0.35
0.35
0.35
0.25
0.35
175
250
125
0.6
0.2
0.2
0.9
0.4
0.4
7.5
7.5
50
0
‐25E
1.1
0.6
0.6
0.35
0.35
0.35
0.25
0.35
175
250
125
0.6
0.2
0.2
0.9
0.4
0.4
7.5
7.5
DDR2‐800D
50
0
‐25D
Max
1.1
0.6
0.6
Units
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ps
ps
ps
ps
ns
ns
ns
ns
16,17,
16,17,
Notes
15,17
15,17
18
18
10
13
7
7
21