is43dr16640a-3dbi Integrated Silicon Solution, Inc., is43dr16640a-3dbi Datasheet - Page 23
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is43dr16640a-3dbi
Manufacturer Part Number
is43dr16640a-3dbi
Description
1gb X8, X16 Ddr2 Sdram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
1.IS43DR16640A-3DBI.pdf
(28 pages)
IS43DR81280A, IS43/46DR16640A
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
Notes:
1.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00A, 12/11/2009
DQ to Low Impedance from
CK/CK#
Mode Register Set Delay
OCD Drive Mode Output
Delay
ODT Drive Mode Output
Delay
Exit Self refresh to Non‐Read
Command
Exit Self refresh to Read
Command
Exit Precharge Power Down
to any Non‐Read Command
Exit Active Power Down to
Read Command
Exit Active Power Down to
Read Command (slow exit,
low power)
Minimum time clocks
remains ON after CKE
asynchronously drops LOW
CKE minimum high and low
pulse width
Average Periodic Refresh
Interval (T
Average Periodic Refresh
Interval (T
Period Jitter
Half Period Jitter
Cycle to Cycle Jitter
Cumulative error, 2 cycles
Cumulative error, 3 cycles
Cumulative error, 4 cycles
Cumulative error, 5 cycles
Cumulative error, 6‐10 cycles
Cumulative error, 11‐50
cycles
Input slew rate is 1 V/ns and AC timings are guaranteed for linear signal transitions.
Parameter
C
C
= 0°C to +85° C)
= +85°C to +95° C)
tERR(2PE
tERR(3PE
tERR(4PE
tERR(5PE
tERR(11‐
tLZ(DQ)
Symbol
tAXRDS
tJITDTY
tERR(6‐
tDELAY
tJITPER
10PER)
50PER)
tXARD
tMOD
tXSNR
tXSRD
tJITCC
tMRD
tREFI
tREFI
tCKE
tOIT
tXP
R)
R)
R)
R)
6‐AL
‐125
‐125
‐250
‐175
‐225
‐250
‐250
‐350
‐450
Min
DDR2‐533C
200
2
0
0
2
2
3
‐37C
Max
125
450
125
250
175
225
250
250
350
7.8
3.9
12
12
7‐AL
‐125
‐125
‐250
‐175
‐225
‐250
‐250
‐350
‐450
Min
DDR2‐667D
200
2
3
2
0
0
2
Min = 2 x tAC(min), Max = tAC(max)
‐3D
Max
125
125
250
175
225
250
250
350
450
7.8
3.9
12
12
Min = t
Min = t
8‐AL
‐100
‐100
‐200
‐150
‐175
‐200
‐200
‐300
‐450
Min
200
IS
DDR2‐800E
RFC
+t
2
0
0
2
2
3
+ 10, Max = n/a
CK
‐25E
+t
IH
Max
100
100
200
150
175
200
200
300
450
, Max = n/a
7.8
3.9
12
12
8‐AL
‐100
‐100
‐200
‐150
‐175
‐200
‐200
‐300
‐450
Min
DDR2‐800D
200
2
0
0
2
2
3
‐25D
Max
100
100
200
150
175
200
200
300
450
7.8
3.9
12
12
‐180
‐132
‐157
‐175
‐188
‐250
‐425
Min
DDR2‐1066F
200
10‐
‐90
‐75
AL
2
0
0
2
2
3
‐19F
Max
180
132
157
175
188
250
425
3.9
7.8
12
12
90
75
Units
tCK
ns
ns
ns
ns
t
t
t
t
ns
t
μs
μs
ps
ps
ps
ps
ps
ps
ps
ps
ps
CK
CK
CK
CK
CK
18, 23
Notes
23
19
14
18
22
22
22
22
22
22
22
22
22
7
9