is42s32400e Integrated Silicon Solution, Inc., is42s32400e Datasheet - Page 14

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is42s32400e

Manufacturer Part Number
is42s32400e
Description
4m X 32 128mb Synchronous Dram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet

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DC RECOMMENDED OPERATING CONDITIONS
Symbol
IS42S32400E
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
14
Symbol
V
V
V
V
P
I
T
T
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Symbol
C
C
C
cs
opr
ih
il
out
stg
dd max
ddq max
in
d max
in1
in2
i
/
V
V
o
V
V
(min) = -1.2V (
(max) = V
ddq
ih
il
dd
(1)
(2)
ddq
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance:I/Os
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
+1.2V (
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
pulse width
pulse width
< 3
ns
).
< 3
ns
).
(1)
(At T
a
= 0 to +25°C, V
Com.
Ind.
Min.
-0.3
3.0
3.0
2.0
Min.
2.5
2.5
4.0
–1.0 to V
–0.5 to V
dd
Typ.
–0.5 to +4.6
–0.5 to +4.6
–65 to +150
3.3
3.3
–40 to +85
0 to +70
= V
Rating
50
1
ddq
ddq
dd
+ 0.5
= 3.3 ± 0.3V)
+ 0.5
V
ddq
Max.
+0.8
Integrated Silicon Solution, Inc. - www.issi.com
3.6
3.6
3.5
3.8
6.5
-6
+ 1.2
Max.
Unit
mA
°C
°C
W
V
V
V
V
Unit
4.0
5.0
6.5
V
V
V
V
-7
Unit
pF
pF
pF
Rev. 00B
03/06/08

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