is62wv10248bll Integrated Silicon Solution, Inc., is62wv10248bll Datasheet

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is62wv10248bll

Manufacturer Part Number
is62wv10248bll
Description
1m X 8 Low Voltage, Ultra Low Power Cmos Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet

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IS62WV10248BLL
1M x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 55ns, 70ns
• CMOS low power operation:
• TTL compatible interface levels
• Single power supply:
• Fully static operation: no clock or refresh
• Three state outputs
• Industrial temperature available
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. C
03/17/06
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
36 mW (typical) operating
12 µW (typical) CMOS standby
required
2.5V--3.6V V
DD
I/O0-I/O7
(IS62WV10248BLL)
A0-A19
V
GND
DD
CS2
CS1
WE
OE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
1-800-379-4774
DESCRIPTION
The
RAMs organized as 1M words by 8 bits. It is fabricated using
ISSI
reliable process coupled with innovative circuit design
techniques, yields high-performance and low power
consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS input
levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS62WV10248BLL is packaged in the JEDEC standard
48-pin mini BGA (7.2mm x 8.7mm).
ISSI
's high-performance CMOS technology. This highly
MEMORY ARRAY
IS62WV10248BLL is a high-speed, 8M bit static
COLUMN I/O
1M x 8
ISSI
MARCH 2006
®
1

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is62wv10248bll Summary of contents

Page 1

... CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV10248BLL is packaged in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm DECODER MEMORY ARRAY ...

Page 2

... IS62WV10248BLL PIN DESCRIPTIONS A0-A19 Address Inputs CS1 Chip Enable 1 Input CS2 Chip Enable 2 Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Input/Output NC No Connection V Power DD GND Ground PIN CONFIGURATION 48-pin mini BGA (B) (7.2mm x 8.7mm ...

Page 3

... CS2 I/O Operation X X High High High OUT (1) –0 –0.2 to +3.8 –65 to +150 IS62WV10248BLL 2.5V - 3.6V 2.5V - 3.6V (Over Operating Range) Test Conditions 2.5-3. 2.1 mA 2.5-3.6V OL 2.5-3.6V 2.5-3.6V GND ≤ V ≤ GND ≤ V ≤ Outputs Disabled OUT DD 1-800-379-4774 ISSI ...

Page 4

... TM AC TEST LOADS R1 VTM OUTPUT 30 pF Including jig and scope Figure 1 4 Conditions Max OUT IS62WV10248BLL (Unit) 0 -0. REF See Figures 1 and 2 OUTPUT R2 Figure 2 Integrated Silicon Solution, Inc. — www.issi.com — ISSI Unit VTM ...

Page 5

... IS62WV10248BLL POWER SUPPLY CHARACTERISTICS IS62WV10248BLL Symbol Parameter Test Conditions I V Dynamic Operating Supply Current I I Operating Supply Current CS2 = V I TTL Standby Current (TTL Inputs) V CS1 = CMOS Standby CS1 ≥ V Current (CMOS Inputs) CS2 ≤ 0.2V, ...

Page 6

... IS62WV10248BLL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CS1/CS2 Access Time t t ACS1/ ACS2 OE Access Time t DOE OE to High-Z Output t (2) HZOE OE to Low-Z Output t (2) LZOE CS1/CS2 to High-Z Output ...

Page 7

... IS62WV10248BLL AC WAVEFORMS (CS1, CS2, OE Controlled) READ CYCLE NO. 2 (1,3) ADDRESS OE CS1 t CS2 DOUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CS1 Address is valid prior to or coincident with CS1 LOW and CS2 HIGH transition. Integrated Silicon Solution, Inc. — www.issi.com — ...

Page 8

... IS62WV10248BLL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time WC CS1/CS2 to Write End t t SCS1/ SCS2 t Address Setup Time to Write End AW t Address Hold from Write End HA t Address Setup Time SA WE Pulse Width t (4) PWE t Data Setup to Write End SD t Data Hold from Write End ...

Page 9

... IS62WV10248BLL WRITE CYCLE NO. 2 (WE Controlled HIGH During Write Cycle) ADDRESS OE CS1 CS2 WE t DOUT DATA UNDEFINED DIN (WE Controlled LOW During Write Cycle) WRITE CYCLE NO. 3 ADDRESS OE CS1 CS2 DOUT DATA UNDEFINED DIN Integrated Silicon Solution, Inc. — www.issi.com — ...

Page 10

... IS62WV10248BLL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR DATA RETENTION WAVEFORM (CS1 t SDR V DD 3.0V 2. CS1 GND DATA RETENTION WAVEFORM (CS2 Controlled 3.0 CS2 2. ...

Page 11

... IS62WV10248BLL ORDERING INFORMATION: IS62WV10248BLL (2.5V - 3.6V) Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 55 IS62WV10248BLL-55BI IS62WV10248BLL-55BLI 70 IS62WV10248BLL-70BI 70 IS62WV10248BLL-70XI Integrated Silicon Solution, Inc. — www.issi.com — Rev. C 03/17/06 Package mini BGA (7.2mm x 8.7mm) mini BGA (7.2mm x 8.7mm), Lead-free mini BGA (7.2mm x 8.7mm) DIE ...

Page 12

... IS62WV10248BLL Mini Ball Grid Array Package Code: B (48-pin) Top View SEATING PLANE mBGA - 7.2mm x 8.7mm MILLIMETERS Sym. Min. Typ. Max. N0. Leads 48 A — — 1. .24 — 0.30 A2 0.60 — — D 8.60 8.70 8.80 D1 5.25BSC E 7.10 7.20 7.30 E1 3.75BSC e 0.75BSC b 0.30 0.35 0.40 12 ...

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