nlx1g10 ON Semiconductor, nlx1g10 Datasheet - Page 4
nlx1g10
Manufacturer Part Number
nlx1g10
Description
Nlx1g10 3-input Nand Gate
Manufacturer
ON Semiconductor
Datasheet
1.NLX1G10.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
nlx1g10AMX1TCG
Manufacturer:
ON Semiconductor
Quantity:
2 300
7. C
AC ELECTRICAL CHARACTERISTICS
Symbol
load. Average operating current can be obtained by the equation I
dynamic power consumption: P
t
t
C
PLH
C
PHL
PD
PD
IN
,
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
Propagation Delay,
Input to Output
Input Capacitance
Power Dissipation
Capacitance (Note 7)
Parameter
D
= C
PD
1.65−1.95
• V
2.3−2.7
3.0−3.6
4.5−5.5
V
(V)
5.5
3.3
5.5
CC
CC
(Input t
2
• f
in
r
+ I
= t
R
R
R
R
R
R
CC
http://onsemi.com
L
L
f
L
L
L
L
= 2.5 nS)
= 500 W, C
= 500 W, C
V
V
= 1 MW, C
= 1 MW, C
= 1 MW, C
= 1 MW, C
• V
IN
IN
Condition
CC.
= 0 V or V
= 0 V or V
10 MHz
Test
4
CC(OPR)
L
L
L
L
L
L
= 15 pF
= 15 pF
= 15 pF
= 15 pF
= 50 pF
= 50 pF
CC
CC
= C
PD
• V
Min
2.0
0.8
0.5
1.5
0.5
0.8
CC
• f
T
in
A
+ I
= 25 5C
Typ
5.5
3.0
2.6
3.0
2.2
2.4
4.0
20
26
CC
. C
PD
Max
18.5
7.5
8.5
5.5
7.0
11
is used to determine the no−load
T
Min
2.0
0.8
0.5
1.5
0.5
0.8
A
= −555C to
+1255C
Max
11.5
8.0
9.0
6.0
7.5
19
Unit
pF
pF
ns