74aup1t45 NXP Semiconductors, 74aup1t45 Datasheet

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74aup1t45

Manufacturer Part Number
74aup1t45
Description
Low-power Dual Supply Translating Transceiver; 3-state
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
74aup1t45GF
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
74aup1t45GM
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. General description
2. Features
The 74AUP1T45 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
The 74AUP1T45 is a single bit transceiver featuring two data input-outputs (A and B), a
direction control input (DIR) and dual supply pins (V
bidirectional level translation. Both V
between 1.1 V and 3.6 V making the device suitable for interfacing between any of the low
voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins A and DIR are referenced to
V
and a LOW on DIR allows transmission from B to A.
Schmitt trigger action on all inputs makes the circuit tolerant of slower input rise and fall
times across the entire V
dynamic power consumption and is fully specified for partial power-down applications
using I
current through the device when it is powered down. In suspend mode when either V
or V
I
I
I
I
I
I
I
I
I
I
CC(A)
74AUP1T45
Low-power dual supply translating transceiver; 3-state
Rev. 01 — 18 October 2006
Wide supply voltage range:
High noise immunity
Complies with JEDEC standards:
ESD protection:
Low static power consumption; I
Suspend mode
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
I
OFF
CC(B)
N
N
N
N
N
N
N
N
OFF
and pin B is referenced to V
V
V
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
HBM JESD22-A114-D Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101-C exceeds 1000 V
circuitry provides partial Power-down mode operation
CC(A)
CC(B)
are at GND, both A and B are in the high-impedance OFF-state.
. The I
: 1.1 V to 3.6 V
: 1.1 V to 3.6 V
OFF
circuitry disables the output, preventing any damaging backflow
CC(A)
and V
CC(B)
CC
CC(B)
CC(A)
= 0.9 A (maximum)
. A HIGH on DIR allows transmission from A to B
ranges. The device ensures low static and
and V
CC(B)
CC(A)
CC
can be supplied at any voltage
and V
CC(B)
Product data sheet
) which enable
CC(A)

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