Si5915DC-DS Vishay Intertechnology, Si5915DC-DS Datasheet - Page 2

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Si5915DC-DS

Manufacturer Part Number
Si5915DC-DS
Description
Ds-spice Model For Si5915DC
Manufacturer
Vishay Intertechnology
Datasheet
SPICE Device Model Si5915DC
Vishay Siliconix
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
t
t
V
Q
Q
GS(th)
D(on)
d(on)
d(off)
g
Q
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
DS
I
D
≅ − 1A, V
= − 4V, V
I
F
V
V
V
= − 0.90A, di/dt = 100A/µs
V
V
V
I
GS
DS
GS
S
Test Condition
DS
V
GS
DS
= − 0.90A, V
DD
< − 5V, V
= − 4.5V, I
= − 2.5V, I
= V
= − 5V, I
= − 1.8V, I
= − 4V, R
GEN
GS
GS
= − 4.5V, I
, I
= − 4.5V, R
D
GS
D
= − 250µA
D
D
= − 3.4A
D
GS
L
= − 4.5V
= − 3.4A
= − 2.7A
= − 1A
= 4Ω
= 0V
D
= − 3.4A
G
= 6Ω
Simulated
Data
0.053
0.085
0.129
- 0.80
0.81
8.3
5.9
1.3
1.4
68
43
38
26
35
33
Measured
Data
- 0.80
0.058
0.090
0.131
Document Number: 71696
5.9
1.3
1.4
20
70
35
35
30
8
Unit
20-Sep-01
nC
ns
V
A
S
V

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