ad829sq-883b Analog Devices, Inc., ad829sq-883b Datasheet - Page 4

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ad829sq-883b

Manufacturer Part Number
ad829sq-883b
Description
High-speed, Low-noise Video Op Amp
Manufacturer
Analog Devices, Inc.
Datasheet
AD829
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Internal Power Dissipation
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± V
Differential Input Voltage
Output Short Circuit Duration . . . . . . . . . . . . . . . . . Indefinite
Storage Temperature Range (Q, E) . . . . . . . . –65°C to +150°C
Storage Temperature Range (N, R) . . . . . . . . –65°C to +125°C
Operating Temperature Range
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C
NOTES
1
2
3
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD829 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; the functional operation of
the device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Maximum internal power dissipation is specified so that T
150°C at an ambient temperature of 25°C.
Thermal characteristics:
If the differential voltage exceeds 6 V, external series protection resistors should
be added to limit the input current.
PDIP (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
SOIC (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9 W
CERDIP (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
LCC (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W
AD829J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
AD829A . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C
AD829S . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
8-lead PDIP package: θ
8-lead CERDIP package: θ
20-lead LCC package: θ
8-lead SOIC package: θ
JA
JA
JA
= 100°C/W (derate at 8.7 mW/°C)
= 125°C/W (derate at 6 mW/°C).
= 77°C/W
JA
3
= 110°C/W (derate at 8.7 mW/°C)
2
. . . . . . . . . . . . . . . . . . . . . . . ± 6 V
1
J
does not exceed
–4–
Figure 1. Maximum Power Dissipation vs. Temperature
SUBSTRATE CONNECTED TO +V
2.5
2.0
1.5
1.0
0.5
–55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85 95 105 115 125
0
Dimensions shown in inches and (mm).
Contact factory for latest dimensions.
METALLIZATION PHOTO
PDIP
CERDIP
AMBIENT TEMPERATURE ( C)
SOIC
S
LCC
REV. G

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