lm6162 National Semiconductor Corporation, lm6162 Datasheet

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lm6162

Manufacturer Part Number
lm6162
Description
High Speed Operational Amplifier
Manufacturer
National Semiconductor Corporation
Datasheet
© 1999 National Semiconductor Corporation
LM6162
High Speed Operational Amplifier
General Description
The LM6162 family of high-speed amplifiers exhibits an ex-
cellent speed-power product, delivering 300 V/µs and
100 MHz gain-bandwidth product (stable for gains as low as
+2 or −1) with only 5 mA of supply current. Further power
savings and application convenience are possible by taking
advantage of the wide dynamic range in operating supply
voltage which extends all the way down to +5V.
These amplifiers are built with National’s VIP
tegrated PNP) process which provides fast transistors that
are true complements to the already fast NPN devices. This
advanced junction-isolated process delivers high speed per-
formance without the need for complex and expensive di-
electric isolation.
Features
n High slew rate:
Connection Diagrams
VIP
LM6162N
LM6162J/883
5962-9216501PA
LM6162WG/883
5962-9216501XA
−55˚C
is a trademark of National Semiconductor Corporation.
Military
T
See NS Package Number W10A
A
10-Pin Ceramic Flatpak
+125˚C
300 V/µs
Top View
Temperature Range
−25˚C
Industrial
DS011061
T
A
DS011061-15
+85˚C
(Vertically In-
0˚C
Commercial
n High gain-bandwidth product: 100 MHz
n Low supply current: 5 mA
n Fast settling time: 120 ns to 0.1%
n Low differential gain:
n Low differential phase:
n Wide supply range: 4.75V to 32V
n Stable with unlimited capacitive load
n Well behaved; easy to apply
Applications
n Video amplifier
n Wide-bandwidth signal conditioning for image
n Hard disk drive preamplifier
n Error amplifier for high-speed switching regulator
T
processing (FAX, scanners, laser printers)
A
+70˚C
See NS Package Number N08E or J08A
8-Pin Molded DIP
8-Pin Ceramic DIP
10-Lead Ceramic SOIC
<
0.1%
<
Package
0.1˚
DS011061-2
www.national.com
May 1999
Drawing
WG10A
N08E
J08A
NSC

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