Si5441DC-DS Vishay Intertechnology, Si5441DC-DS Datasheet - Page 2

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Si5441DC-DS

Manufacturer Part Number
Si5441DC-DS
Description
Ds-spice Model For Si5441DC
Manufacturer
Vishay Intertechnology
Datasheet
SPICE Device Model Si5441DC
Vishay Siliconix
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
t
t
V
Q
D(on)
Q
GS(th)
d(on)
d(off)
g
Q
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
DS
I
D
= −10 V, V
≅ −1 A, V
I
F
V
V
V
V
V
V
= −1.1 A, di/dt = 100 A/µs
V
DS
GS
GS
GS
I
DS
Test Condition
DS
S
DD
= −1.1 A, V
≤ −5 V, V
= −4.5 V, I
= −3.6 V, I
= −2.5 V, I
= −10 V, I
= V
= −10 V, R
GEN
GS
GS
, I
= −4.5 V, R
= −4.5 V, I
D
GS
= −250 µA
D
D
D
D
GS
L
= −3.9 A
= −4.5 V
= −3.9 A
= −3.7 A
= −3.1 A
= 10 Ω
= 0 V
D
G
= −3.9 A
= 6 Ω
Typical
0.043
0.049
0.069
−0.80
1.02
10.5
2.5
60
12
23
29
39
46
32
3
Document Number: 71545
Unit
nC
ns
V
A
S
V
07-Oct-99

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