u6264b Alliance Memory, Inc, u6264b Datasheet - Page 5

• Manufacturer Part Number: u6264b
• Description: Standard 8k X 8 Sram
• Manufacturer: Alliance Memory, Inc

4.5 V
April 20, 2004
0 V
Switching Characteristics
Time to Output in Low-Z
Cycle Time
Access Time
Pulse Widths
Setup Times
Data Hold Time
Address Hold from End of Write
Output Hold Time from Address Change
Write Cycle Time
Read Cycle Time
E1 LOW or E2 HIGH to Data Valid
G LOW to Data Valid
Address to Data Valid
Write Pulse Width
Chip Enable to End of Write
Address Setup Time
Chip Enable to End of Write
Write Pulse Width
Data Setup Time
E1 HIGH or E2 LOW to Output in High-Z
W LOW to Output in High-Z
G HIGH to Output in High-Z
2.2 V
V
V
Data Retention Mode E1-Controlled
E2(DR)
CC(DR)
t
DR
≥ V
- 0.2 V ≤ V
CC(DR)
Data Retention
V
Chip Deselect to Data Retention Time
Operating Recovery Time
CC(DR)
- 0.2 V or V
E1(DR)
≥ 2 V
≤ V
CC(DR)
E2(DR)
t
+ 0.3 V
≤ 0.2 V
rec
2.2 V
t
t
t
t
HZWE
HZCE
HZOE
Alt.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ACE
WC
CW
CW
RC
OE
WP
WP
DH
AH
OH
AA
AS
DS
V
LZ
E1
CC
5
Symbol
4.5 V
0 V
t
t
DR
rec
t
0.8 V
t
t
t
t
t
t
t
t
t
t
dis(W)
IEC
t
t
su(W)
t
t
dis(E)
dis(G)
t
t(QX)
w(W)
su(A)
su(E)
su(D)
t
w(E)
t
a(E)
a(G)
a(A)
h(D)
h(A)
v(A)
cW
cR
:
:
Data Retention Mode E2-Controlled
min 0 ns
min t
t
DR
cR
Min.
Data Retention
V
V
70
70
50
65
65
50
35
5
0
0
0
5
0
0
0
CC(DR)
E2(DR)
-
-
-
≤ 0.2 V
≥ 2 V
Max.
t
10
70
40
70
25
30
25
rec
U6264B
0.8 V
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
E2
V
CC