stm7096n SamHop Microelectronics Corp., stm7096n Datasheet - Page 3

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stm7096n

Manufacturer Part Number
stm7096n
Description
N-channel E Nhancement Mode Field Effect Transistor
Manufacturer
SamHop Microelectronics Corp.
Datasheet
S T M7096N
E LE CTR ICAL CHAR ACTE R IS TICS (T
Notes
a.S urface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
F igure 3. On-R es is tance vs . Drain C urrent
Parameter
20
15
10
25
30
25
20
15
10
5
5
0
0
F igure 1. Output C haracteris tics
0
0
V
DS
0.5
V
, Drain-to-S ource Voltage (V )
V
5
G S
G S
I
=4.5V
D
=10V
and G ate V oltage
, Drain C urrent (A)
1
10
1.5
V
V
G S
V
G S
G S
=8V
=4.5V
15
=10V
2
S ymbol
V
20
G S
2.5
V
=3V
S D
C
25
3
=25 C unless otherwise noted)
3
b
V
GS
Condition
= 0V, Is = 1.7A
F igure 4. On-R es is tance Variation with
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
15
10
-55
5
0
F igure 2. Trans fer C haracteris tics
0
V
T j, J unction T emperature ( C )
I
V
G S
-25
D
Drain C urrent and Temperature
=10A
G S
=4.5V
0.7
, G ate-to-S ource Voltage (V )
0
V
1.4
T j=125 C
I
G S
D
=12A
=10V
25
2.1
Min Typ Max Unit
25 C
50
2.8
75
-55 C
0.76
100
3.5
T j( C )
125
1.3
4.2
V

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