km684002 Samsung Semiconductor, Inc., km684002 Datasheet - Page 3

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km684002

Manufacturer Part Number
km684002
Description
512kx8 Bit High Speed Static Ram 5v Operating , Revolutionary Pin Out. Operated At Commercial, Extended And Industrial Temperature Range.
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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KM684002, KM684002E, KM684002I
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Rating" may cause permanent damage to the device. This is a stress ra ting only and func-
RECOMMENDED DC OPERATING CONDITIONS
NOTE: Above parameters are also guaranteed at extended and industrial temperature ranges.
DC AND OPERATING CHARACTERISTICS
NOTE: Above parameters are also guaranteed at extended and industrial temperature ranges.
CAPACITANCE*
* NOTE : Capacitance is sampled and not 100% tested
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
Supply Voltage
Ground
Input Low Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
tional operation of the device at these at these or any other conditions above those indicated in the operating sections of this
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Input/Output Capacitance
Input Capacitance
** V
* V
* V
IL
IH
CC
(Min) = -2.0V a.c(Pulse Width 10ns) for I 20
(Max) = V
=5.0V 5% Temp. = 25 C
Parameter
Parameter
CC
Item
Supply Relative to V
CC +
Parameter
(T
2.0V a.c (Pulse Width 10ns) for I 20
A
=25 C, f=1.0MHz)
Commercial
Extended
Industrial
SS
Symbol
SS
V
V
I
V
I
I
I
SB1
OH1*
I
CC
LO
SB
OH
LI
OL
Symbol
Symbol
V
V
V
V
CC
C
SS
C
IH
IL
I/O
IN
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
OL
OH
OH1
.
IN
OUT
IN
§ Ì
=8mA
=-4mA
= V
=-0.1mA
V
= V
IH
IL,
CC
SS
§ Ì
or OE=V
V
-0.2V or V
SS
IN
to V
V
(T
Symbol
to V
= V
IN
T
A
CC
V
-0.5*
Test Conditions
, V
P
T
T
T
CC
STG
Min
=0 to 70 C, Vcc= 5.0V 10%, unless otherwise specified)
4.5
2.2
Test Conditions
CC
IH
CC
D
A
A
A
0
IH
OUT
- 3 -
-0.2V,
IH
or V
IN
or WE=V
V
V
(T
I/O
IN
0.2V
A
IL,
=0V
=0V
=0 to 70 C)
I
OUT
IL
=0mA
Typ
5.0
0
-
-
-0.5 to 7.0
-0.5 to 7.0
-65 to 150
-25 to 85
-40 to 85
Rating
0 to 70
17ns
20ns
25ns
1.0
MIN
-
-
V
CC
Min
2.4
Max
-2
-2
5.5
0.8
-
-
-
-
-
-
-
+0.5**
0
PRELIMINARY
Max
8
6
CMOS SRAM
specification is not implied.
Max
3.95
180
170
160
0.4
60
10
2
2
-
Unit
W
V
V
C
C
C
C
Unit
June -1997
V
V
V
V
Unit
pF
pF
Unit
§ Ì
§ Ì
§ Ì
Rev 3.0
V
V
V
A
A

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