xc3s1000-5fgg900i Xilinx Corp., xc3s1000-5fgg900i Datasheet - Page 57

• Manufacturer Part Number: xc3s1000-5fgg900i
• Description: Spartan-3 Fpga Family
• Manufacturer: Xilinx Corp.

Table 29: Power Voltage Ramp Time Requirements
Table 30: Power Voltage Levels Necessary for Preserving RAM Contents
DS099-3 (v2.5) December 4, 2009
Product Specification
98
Notes:
1.
2.
3.
4.
5.
Notes:
1.
2.
3.
Symbol
T
Symbol
V
V
T
If a limit exists, this specification is based on characterization.
The ramp time is measured from 10% to 90% of the full nominal voltage swing for all I/O standards.
For information on power-on current needs, see
For mask revisions earlier than revision E (see
and XC3S400 devices in QFP packages, and limited to 0.6 ms for the XC3S200, XC3S400, XC3S1500, and XC3S4000 devices in
the FT and FG packages.
For earlier device versions with the FQ fabrication/process code (see
500 µs.
RAM contents include data stored in CMOS configuration latches.
The level of the V
If a brown-out condition occurs where V
the minimum power-on reset voltage indicated in
CCINT
DRAUX
DRINT
CCO
R
V
V
in three-rail power-on sequence
V
V
CCO
CCINT
CCINT
CCAUX
CCO
ramp time for all eight banks
ramp time, only if V
level required to retain RAM data
level required to retain RAM data
supply has no effect on data retention.
Description
CCAUX
CCINT
Spartan-3 FPGA Family: DC and Switching Characteristics
or V
Mask and Fab Revisions, page
is last
Power-On Behavior, page 52
Table 28
CCINT
Description
www.xilinx.com
drops below the retention voltage, then V
All
All
in order to clear out the device configuration content.
Device
Mask and Fab Revisions, page
All
All
Package
55), T
CCO
No limit
No limit
min is limited to 2.0 ms for the XC3S200
Min
(4)
CCAUX
55), T
No limit
or V
Max
CCINT
CCINT
-
Min
2.0
1.0
(5)
must drop below
max is limited to
Units
Units
V
V
57