BU2725AW Inchange Semiconductor, BU2725AW Datasheet
BU2725AW
Manufacturer Part Number
BU2725AW
Description
isc Silicon NPN Power Transistor
Manufacturer
Inchange Semiconductor
Datasheet
1.BU2725AW.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of color
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
SYMBOL
R
: V
TV receivers.
V
V
V
T
I
I
P
T
th j-c
CES
CEO
EBO
I
CM
I
BM
stg
C
B
C
J
CEO(SUS)
B
Silicon NPN Power Transistor
Collector- Emitter Voltage(V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current- Continuous
Base Current-Peak
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
Thermal Resistance,Junction to Case
= 825V (Min)
C
=25℃
PARAMETER
PARAMETER
BE
a
= 0)
=25
℃)
-65~150
VALUE
1700
825
125
150
7.5
12
30
12
20
MAX
2.8
UNIT
UNIT
℃/W
℃
℃
W
V
V
V
A
A
A
A
isc
Product Specification
BU2725AW
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BU2725AW Summary of contents
Page 1
... C T Junction Temperature J Storage Temperature Range T stg SYMBOL PARAMETER Thermal Resistance,Junction to Case R th j-c isc Website：www.iscsemi.cn ℃) =25 a VALUE UNIT = 0) 1700 V BE 825 V 7 125 W ℃ 150 ℃ -65~150 MAX UNIT ℃/W 2.8 isc Product Specification BU2725AW ...
Page 2
... CONDITIONS I = 100mA ; I = 0,L= 25mH 1mA 7A 1.75A 7A 1.75A 1700V ; 1700V ; =125℃ 7. 0. BU2725AW MIN TYP. MAX UNIT 825 V 7.5 V 1.0 V 1.1 V 1.0 mA 2.0 1 8.5 ...